thinQ!™ SiC Schottky Diode
1
Description
IDW10S120
The 1200V family of Infineon SiC Schottky diodes has emerged over the
years as the industry standard and is now being extended with the
IDWxxS120 product family in the TO247 package.
The very good thermal characteristics of the TO247 in combination with
the low
V
f
of the 1200V diodes make it particularly suitable in power
applications where relatively high currents are demanded and utmost
efficiency is required. With the introduction of this package, Infineon now
offers a current capability of up to 30A in the 1200V range.
1
2
3
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
1)
Qualified according to JEDEC for target applications
Optimized for high temperature operation
1
2
CASE
3
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications
SMPS; CCM PFC
Solar applications; UPS; Motor Drives
Table 1
Key Performance Parameters
Parameter
Value
Unit
V
DC
1200
V
Q
C
@
V
R
=400V
36
nC
I
F
@
T
c
< 140°C
10
A
Table 2
Pin 1
n.c.
Pin Definition
Pin 2
Pin 3
C
A
Package
PG-TO247-3
Marking
D10S120
Related links
www.infineon.com/sic
Type / ordering Code
IDW10S120
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2012-03-23
thinQ!
TM
SiC Schottky Diode
IDW10S120
Table of contents
Table of Contents
1
2
3
4
5
6
7
Description .......................................................................................................................................... 2
Maximum ratings ................................................................................................................................ 4
Thermal characteristics ..................................................................................................................... 4
Electrical characteristics ................................................................................................................... 5
Electrical characteristics diagrams .................................................................................................. 6
Package outlines ................................................................................................................................ 8
Revision History ................................................................................................................................. 9
Final Data Sheet
3
Rev. 2.0, 2012-03-23
thinQ!
TM
SiC Schottky Diode
IDW10S120
Maximum ratings
2
Table 3
Parameter
Maximum ratings
Maximum ratings
Symbol
Min.
I
F
–
–
–
–
–
–
–
–
–
-55
–
Values
Typ.
–
–
–
–
–
–
–
–
–
–
–
Max.
10
53
44
266
14
10
1200
50
115
175
60
V
V/ns
W
°C
Ncm
M3 and M3.5 screws
V
R
=0..480 V
T
C
= 25°C
A²s
A
Unit
Note/Test Condition
T
C
< 140°C, D=1
T
C
= 25°C,
t
p
=10 ms
T
C
= 150°C,
t
p
=10 ms
T
C
= 25°C,
t
p
=10 µs
T
C
= 25°C,
t
p
=10 ms
T
C
= 150°C,
t
p
=10 ms
Continuous forward current
Surge non-repetitive forward current,
I
F,SM
sine halfwave
Non-repetitive peak forward current
i²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Mounting torque
I
F,max
∫ i²dt
V
RRM
dv/dt
P
tot
T
j
;T
stg
3
Table 4
Parameter
Thermal characteristics
Thermal characteristics TO-247-3
Symbol
Min.
R
thJC
R
thJA
–
–
–
Values
Typ.
–
–
–
Max.
1.30
62
260
K/W
°C
leaded
1.6mm (0.063 in.) from
case for 10 s
Unit
Note/Test Condition
Thermal resistance, junction-case
Thermal resistance, junction-
ambient
T
sold
Soldering temperature,
wavesoldering only allowed at leads
Final Data Sheet
4
Rev. 2.0, 2012-03-23
Medical Electronics
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