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SR1200

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size181KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Environmental Compliance
Download Datasheet Parametric View All

SR1200 Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

SR1200 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSECOS
Parts packaging codeDO-41
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
SR1200
Elektronische Bauelemente
Voltage 200 V
1.0 Amp Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Guard ring for overvoltage protection
Very small conduction losses
Low forward voltage drop
Component in accordance to RoHS 2002/95/EC
DO-41
C
A
MECHANICAL DATA
Cases: DO-41
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Terminals: Lead free plating (Tin finish)
Solderable per MIL-STD-202, Method 208
Polarity: Cathode band
Weight: 0.318 grams (approximately)
B
D
A
REF.
A
B
C
D
Millimeter
Min.
Max.
25.4 (TYP)
4.10
5.21
2.00
2.72
0.70
0.90
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25° ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.
C
For capacitive load, de-rate current by 20%.)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Current @ 8.3 ms Half Sine
Maximum Instantaneous Forward Voltage @ 1.0A
Maximum DC Reverse Current at Rated
3
DC Blocking Voltage
Typical Junction Capacitance
Typical Thermal Resistance
2
1
Symbol
V
RRM
V
RMS
V
DC
I
F
I
FSM
V
F
I
R
Rating
200
140
200
1
30
0.9
0.2
Unit
V
V
V
A
A
V
mA
T
C
=25°
C
T
C
=100°
C
2
C
J
R
θJA
T
J
,T
STG
35
70
-55~150
pF
°
C/W
°
C
Operating & Storage Temperature
Notes:
1.
Measured at 1MHz and applied reverse voltage of 4.0 V D.C.
2.
Thermal Resistance Junction to Ambient.
3.
Pulse test: 300us pulse width, 1% duty cycle
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Mar-2013 Rev. A
Page 1 of 2

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