SSG4536C
Elektronische Bauelemente
N-Ch: 7.1A, 30V, R
DS(ON)
28 mΩ
Ω
P-Ch: -6A, -30V, R
DS(ON)
39 mΩ
Ω
N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
R
DS(on)
and to ensure minimal power loss and heat
dissipation.
SOP-8
B
L
D
M
FEATURES
Low R
DS(on)
provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space
Fast switching speed
High performance trench technology
A
C
N
J
H
G
Millimeter
Min.
Max.
5.8
6.20
4.80
5.00
3.80
4.00
0°
8°
0.50
0.93
0.19
0.25
1.27 TYP.
K
F
E
REF.
A
B
C
D
E
F
G
REF.
H
J
K
L
M
N
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless telephones
Millimeter
Min.
Max.
0.35
0.51
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
Top View
PACKAGE INFORMATION
Package
SOP-8
MPQ
2.5K
Leader Size
13 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Rating
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
2
1
1
Symbol
V
DS
V
GS
T
A
= 25°
C
I
D
T
A
= 70°
C
I
DM
I
S
P
D
T
A
= 70°
C
N-CH
30
±20
7.1
5.8
20
1.3
2.1
1.3
P-CH
-30
±20
-6
-4.9
-20
-1.3
Unit
V
V
A
A
A
A
W
W
°
C
Continuous Source Current (Diode Conduction)
Total Power Dissipation
1
T
A
= 25°
C
Operating Junction & Storage Temperature Range
T
J
, T
STG
-55 ~ 150
Thermal Resistance Ratings
Maximum Junction-to-Ambient
1
t≦10 sec
Steady State
R
θJA
62.5
110
° /W
C
° /W
C
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Sep-2012 Rev. A
Page 1 of 2
SSG4536C
Elektronische Bauelemente
N-Ch: 7.1A, 30V, R
DS(ON)
28 mΩ
Ω
P-Ch: -6A, -30V, R
DS(ON)
39 mΩ
Ω
N & P-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol Ch
Min.
Typ.
Static
N
Gate Threshold Voltage
V
GS(th)
P
N
Gate-Body Leakage Current
I
GSS
P
N
Zero Gate Voltage Drain Current
I
DSS
P
N
I
D(on)
P
N
Drain-Source On-Resistance
1
Max.
Unit
Teat Conditions
1
-1
-
-
-
-
20
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25
10
-
-
±100
nA
±100
1
µA
-1
-
A
-
28
42
m
39
59
-
S
-
2
V
V
DS
=V
GS
, I
D
=250µA
V
DS
=V
GS
, I
D
= -250µA
V
DS
=0, V
GS
=20V
V
DS
=0, V
GS
= -20V
V
DS
=24V, V
GS
=0
V
DS
= -24V, V
GS
=0
V
DS
=5V, V
GS
=10V
V
DS
= -5V, V
GS
= -10V
V
GS
=10V, I
D
=7.1A
V
GS
=4.5V, I
D
=5.8A
V
GS
= -10V, I
D
= -6A
V
GS
= -4.5V, I
D
= -4.9A
V
DS
=15V, I
D
=6.9A
V
DS
= -15V, I
D
= -5.2A
On-State Drain Current
1
R
DS(ON)
P
-
-
Forward Transconductance
1
N
g
fs
P
-
-
Dynamic
N
Total Gate Charge
Q
g
P
N
Gate-Source Charge
Q
gs
P
N
Gate-Drain(“Miller”) Charge
Q
gd
P
N
Turn-On Delay Time
T
d(on)
P
N
Rise Time
T
r
P
N
Turn-Off Delay Time
T
d(off)
P
N
Fall Time
T
f
P
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
10
1.1
2.2
1.4
1.7
8
10
5
2.8
23
53.6
3
46
-
-
-
-
-
-
-
-
-
-
nS
-
-
-
-
P-Channel
V
DD
= -15V, V
GS
= -10V
I
D
= -1A, R
GEN
= 6
N-Channel
V
DD
=15V, V
GS
=10V
I
D
=1A, R
GEN
=6
nC
P-Channel
I
D
= -5.2A, V
DS
= -15V, V
GS
= -10V
N-Channel
I
D
=6.9A, V
DS
=15V, V
GS
=10V
Notes
1. Pulse test：PW
≦
300µs duty cycle
≦
2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Sep-2012 Rev. A
Page 2 of 2
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
