DIODE 3.5 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| application | ULTRA FAST RECOVERY |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.02 V |
| JESD-30 code | O-LALF-W2 |
| Maximum non-repetitive peak forward current | 90 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 3.5 A |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 200 V |
| Maximum reverse current | 5 µA |
| Maximum reverse recovery time | 0.025 µs |
| surface mount | NO |
| technology | AVALANCHE |
| Terminal form | WIRE |
| Terminal location | AXIAL |
京公网安备 11010802033920号
EEWORLD
