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M58LR256GL85ZC5E

Description
16MX16 FLASH 1.8V PROM, 90ns, PBGA44, 8 X 10 MM, 0.50 MM PITCH, VFBGA-44
Categorystorage    storage   
File Size887KB,115 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M58LR256GL85ZC5E Overview

16MX16 FLASH 1.8V PROM, 90ns, PBGA44, 8 X 10 MM, 0.50 MM PITCH, VFBGA-44

M58LR256GL85ZC5E Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
Parts packaging codeBGA
package instruction8 X 10 MM, 0.50 MM PITCH, VFBGA-44
Contacts44
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time90 ns
startup blockBOTTOM
JESD-30 codeR-PBGA-B44
length10 mm
memory density268435456 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals44
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1 mm
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL EXTENDED
Terminal formBALL
Terminal pitch0.5 mm
Terminal locationBOTTOM
typeNOR TYPE
width8 mm
M58LR256GU, M58LR256GL
M58LR128GU, M58LR128GL
128 and 256Mbit (x16, Mux I/O, Multiple Bank, Multi-Level, Burst)
1.8V supply Flash memories
Feature summary
Supply voltage
– V
DD
= 1.7V to 2.0V for program, erase and
read
– V
DDQ
= 1.7V to 2.0V for I/O Buffers
– V
PP
= 9V for fast program
Multiplexed address/data
Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 66MHz
– Random Access:
85ns (M58LR128GU/L)
90ns (M58LR256GU/L)
Synchronous Burst Read Suspend
Programming time
– 10µs typical Word program time using
Buffer Enhanced Factory Program
command
Memory organization
– Multiple Bank Memory Array:
16 Mbit (M58LR256GU/L) or
8 Mbit (M58LR128GU/L) Banks
– Parameter Blocks (Top or Bottom location)
Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WP for Block Lock-Down
– Absolute Write Protection with V
PP
= V
SS
Security
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
Common Flash Interface (CFI)
FBGA
VFBGA44 (ZC) 8 x 10mm
VFBGA44 (ZB) 7.7 x 9mm
100,000 program/erase cycles per block
Electronic signature
– Manufacturer Code: 20h
– Top Device Codes:
M58LR256GU: 882Ch
M58LR128GU: 882Eh
– Bottom Device Codes
M58LR256GL: 882Dh
M58LR128GL: 882Fh
ECOPACK® packages available
June 2006
Rev 1
1/114
www.st.com
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