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KSC1815LD27Z

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size1MB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KSC1815LD27Z Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

KSC1815LD27Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)350
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
KSC1815
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC
Complement to KSC1815
Collector-Base Voltage V
CBO
= -50V
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Rating
60
50
5
150
50
400
125
-55 ~ 150
Unit
V
V
V
mA
mA
mW
°C
°C
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Noise Figure
Symbol
I
CBO
I
EBO
h
FE
1
h
FE
2
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
NF
Test Conditions
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
V
CE
=6V, I
C
=150mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=1mA
V
CB
=10V, I
E
=0,f=1MHz
V
CE
=6V, I
C
=0.1mA
R
G
=10KΩ,f=1Hz
Min
Typ
Max
0.1
0.1
700
0.1
80
2.0
1.0
0.25
1.0
3.0
1.0
Unit
µA
µA
70
25
V
V
MHz
pF
dB
h
FE
1 CLASSIFICATION
Classification
h
FE1
O
70~140
Y
120~240
G
200~400
L
350~700
Rev. B
©
1999 Fairchild Semiconductor Corporation

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