SST25VF040B-50-4I-QAF datasheet, PDF

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SST25VF040B-50-4I-QAF: DescriptionFlash, 4MX1, PDSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8; Categorystorage storage; File Size331KB，28 Pages; ManufacturerSilicon Laboratories Inc; Environmental Compliance

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SST25VF040B-50-4I-QAF Overview

Flash, 4MX1, PDSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8

SST25VF040B-50-4I-QAF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Silicon Laboratories Inc
Parts packaging code	SON
package instruction	HVSON, SOLCC8,.25
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum clock frequency (fCLK)	50 MHz
Data retention time - minimum	100
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-N8
JESD-609 code	e4
length	6 mm
memory density	4194304 bit
Memory IC Type	FLASH
memory width	1
Number of functions	1
Number of terminals	8
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX1
Package body material	PLASTIC/EPOXY
encapsulated code	HVSON
Encapsulate equivalent code	SOLCC8,.25
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	260
power supply	3/3.3 V
Programming voltage	2.7 V
Certification status	Not Qualified
Maximum seat height	0.8 mm
Serial bus type	SPI
Maximum standby current	0.00002 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	NICKEL PALLADIUM GOLD
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
type	NOR TYPE
width	5 mm
write protect	HARDWARE/SOFTWARE

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4 Mbit SPI Serial Flash

SST25VF040B

SST25VF040B4Mb Serial Peripheral Interface (SPI) flash memory

Data Sheet

FEATURES:

• Single Voltage Read and Write Operations

– 2.7-3.6V

• Serial Interface Architecture

– SPI Compatible: Mode 0 and Mode 3

• High Speed Clock Frequency

– 50 MHz

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Read Current: 10 mA (typical)

– Standby Current: 5 µA (typical)

• Flexible Erase Capability

– Uniform 4 KByte sectors

– Uniform 32 KByte overlay blocks

– Uniform 64 KByte overlay blocks

• Fast Erase and Byte-Program:

– Chip-Erase Time: 35 ms (typical)

– Sector-/Block-Erase Time: 18 ms (typical)

– Byte-Program Time: 7 µs (typical)

• Auto Address Increment (AAI) Programming

– Decrease total chip programming time over

Byte-Program operations

• End-of-Write Detection

– Software polling the BUSY bit in Status Register

– Busy Status readout on SO pin in AAI Mode

• Hold Pin (HOLD#)

– Suspends a serial sequence to the memory

without deselecting the device

• Write Protection (WP#)

– Enables/Disables the Lock-Down function of the

status register

• Software Write Protection

– Write protection through Block-Protection bits in

status register

• Temperature Range

– Commercial: 0°C to +70°C

– Industrial: -40°C to +85°C

• Packages Available

– 8-lead SOIC (200 mils)

– 8-contact WSON (6mm x 5mm)

• All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

SST’s 25 series Serial Flash family features a four-wire,

SPI-compatible interface that allows for a low pin-count

package which occupies less board space and ultimately

lowers total system costs. The SST25VF040B devices are

enhanced with improved operating frequency and even

lower power consumption than the original SST25VFxxxA

devices. SST25VF040B SPI serial flash memories are

manufactured with SST’s proprietary, high-performance

CMOS SuperFlash technology. The split-gate cell design

and thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

The SST25VF040B devices significantly improve perfor-

mance and reliability, while lowering power consumption.

The devices write (Program or Erase) with a single power

supply of 2.7-3.6V for SST25VF040B. The total energy

consumed is a function of the applied voltage, current, and

time of application. Since for any given voltage range, the

SuperFlash technology uses less current to program and

has a shorter erase time, the total energy consumed during

any Erase or Program operation is less than alternative

flash memory technologies.

The SST25VF040B device is offered in both 8-lead SOIC

(200 mils) and 8-contact WSON (6mm x 5mm) packages.

See Figure 1 for pin assignments.

S71295-01-000

1/06

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

SST25VF040B-50-4I-QAF Related Products

	SST25VF040B-50-4I-QAF	SST25VF040B-50-4C-QAF
Description	Flash, 4MX1, PDSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8	Flash, 4MX1, PDSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8
Is it Rohs certified?	conform to	conform to
Maker	Silicon Laboratories Inc	Silicon Laboratories Inc
Parts packaging code	SON	SON
package instruction	HVSON, SOLCC8,.25	HVSON, SOLCC8,.25
Contacts	8	8
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum clock frequency (fCLK)	50 MHz	50 MHz
Data retention time - minimum	100	100
Durability	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-N8	R-PDSO-N8
JESD-609 code	e4	e4
length	6 mm	6 mm
memory density	4194304 bit	4194304 bit
Memory IC Type	FLASH	FLASH
memory width	1	1
Number of functions	1	1
Number of terminals	8	8
word count	4194304 words	4194304 words
character code	4000000	4000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	70 °C
organize	4MX1	4MX1
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	HVSON	HVSON
Encapsulate equivalent code	SOLCC8,.25	SOLCC8,.25
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial	SERIAL	SERIAL
Peak Reflow Temperature (Celsius)	260	260
power supply	3/3.3 V	3/3.3 V
Programming voltage	2.7 V	2.7 V
Certification status	Not Qualified	Not Qualified
Maximum seat height	0.8 mm	0.8 mm
Serial bus type	SPI	SPI
Maximum standby current	0.00002 A	0.00002 A
Maximum slew rate	0.03 mA	0.03 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	3 V
surface mount	YES	YES
technology	CMOS	CMOS
Temperature level	INDUSTRIAL	COMMERCIAL
Terminal surface	NICKEL PALLADIUM GOLD	NICKEL PALLADIUM GOLD
Terminal form	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40
type	NOR TYPE	NOR TYPE
width	5 mm	5 mm
write protect	HARDWARE/SOFTWARE	HARDWARE/SOFTWARE

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