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LLV1005-FB56NJ

Description
General Purpose Inductor, 0.056uH, 5%, 1 Element, Ceramic-Core, SMD
CategoryPassive components    inductor   
File Size95KB,6 Pages
ManufacturerTOKO, INC.
Websitehttps://www.murata.com/
Environmental Compliance
Download Datasheet Parametric View All

LLV1005-FB56NJ Overview

General Purpose Inductor, 0.056uH, 5%, 1 Element, Ceramic-Core, SMD

LLV1005-FB56NJ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTOKO, INC.
Reach Compliance Codeunknown
ECCN codeEAR99
core materialCERAMIC
DC Resistance2.5 Ω
Nominal inductance(L)0.056 µH
Inductor ApplicationsRF INDUCTOR
Inductor typeGENERAL PURPOSE INDUCTOR
Manufacturer's serial numberLLV1005-FB
Number of functions1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Minimum quality factor (at nominal inductance)7
Maximum rated current0.1 A
self resonant frequency2700 MHz
Shape/Size DescriptionRECTANGULAR PACKAGE
shieldNO
surface mountYES
Terminal locationDUAL ENDED
Terminal shapeWRAPAROUND
Test frequency100 MHz
Tolerance5%
Multilayer Chip Inductors
積層チップインダクタ
LLV1005-FB
Series
Inductance Range:
1.0~200nH
Temperature Coefficient of L:
+
250ppm/°C (for reference only)
FEATURES/特長
High SRF (More than twice: Compared with Toko’s
conventional 1005 model)
No polarity
Dual frequency standard for inductance value
Guaranteed SRF range (SRF tolerance:
±20%)
Lead-free terminations
Tight tolerance physical dimensions (±0.03mm,
±0.05mm)
Supports high temperature reflow soldering (260°C, 3
times)
Operating temperature range (−55°C ~
+125°C)
高SRF化(2倍以上:½社1005½状従来品比較)
素子方向レス化
インダクタンス値の2周波規格化
SRFの範囲保証化(SRF公差:±20%)
鉛フリー化
外½寸法の狭公差化(±0.03mm、±0.05mm)
高温リフロー対応可(260℃
×
3回
½用温度範囲(−55 ∼ +125℃
DIMENSIONS/外½寸法図
Length
L (mm)
Width
W (mm)
0.5
±
0.05
Thickness
T (mm)
0.5
±
0.05
Electrode
width A (mm)
L
W
T
1.0
±
0.05
0.25
±
0.1
A
ELECTRICAL CHARACTERISTICS/電気的特性
Inductance Range
Inductance Tolerance
Q (Typical)
S.R.F. (for reference only)
Rated Current
L Temperature Coefficient
(for reference only)
Operating Temperature Range
Storage Temperature Range
1.0~200nH
S ;
±
0.3nH (1.0~5.6nH)
J ;
±
5% (6.8~180nH)
K ;
±
10% (180~200nH)
13~27 (at 800MHz)
2~20GHz
50~300mA
+
250ppm/°C
55~+ 125°C
55~+ 125°C
インダクタンス範囲
インダクタンス許容差
Q (Typical)
自己共振周波数
許容電流値
L 温度係数 (参考値)
½用温度範囲
保存温度範囲
1.0∼200nH
S級; ±0.3nH (1.0∼5.6nH)
J級 ; ±5% (6.8∼180nH)
K級; ±10% (180∼200nH)
13 ~ 27 (at 800MHz)
2∼20GHz
50∼300mA
+250ppm/℃
−55∼+125℃
−55∼+125℃
EXAMPLES OF CHARACTERISTICS/特性例
Inductance vs Frequency
1000
50
1N2
15N
R10
40
30
1N2
15N
R10
Q vs Frequency
Inductance(nH)
100
Q
10
20
10
1
10
100
1000
10000
0
10
100
1000
10000
f(MHz)
f(MHz)
continued on next page
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