
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | TT Electronics plc |
| package instruction | , |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 70 V |
| Maximum drain current (ID) | 5 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| highest frequency band | VERY HIGH FREQUENCY BAND |
| JESD-609 code | e3 |
| Number of components | 1 |
| Operating mode | ENHANCEMENT MODE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| Terminal surface | TIN |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |