ULN2804AFW datasheet, PDF - EEWORLD Datasheet

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ULN2804AFW: Description8CH DARLINGTON SINK DRIVER; CategoryDiscrete semiconductor The transistor; File Size313KB，10 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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ULN2804AFW Overview

8CH DARLINGTON SINK DRIVER

ULN2804AFW Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
package instruction	PLASTIC, SOL-18
Contacts	18
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	50 V
Configuration	COMPLEX
Minimum DC current gain (hFE)	1000
JESD-30 code	R-PDSO-G18
Number of components	8
Number of terminals	18
Maximum operating temperature	85 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	1.31 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	1.6 V

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ULN2804AFW Related Products

	ULN2804AFW	ULN2803AFW	ULN2803AP	ULN2804AP
Description	8CH DARLINGTON SINK DRIVER	8CH DARLINGTON SINK DRIVER	8CH DARLINGTON SINK DRIVER	8CH DARLINGTON SINK DRIVER
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
package instruction	PLASTIC, SOL-18	SMALL OUTLINE, R-PDSO-G18	PLASTIC, DIP-18	PLASTIC, DIP-18
Contacts	18	18	18	18
Reach Compliance Code	unknow	unknow	unknow	unknow
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V
Configuration	COMPLEX	COMPLEX	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	1000	1000	1000	1000
JESD-30 code	R-PDSO-G18	R-PDSO-G18	R-PDIP-T18	R-PDIP-T18
Number of components	8	8	8	8
Number of terminals	18	18	18	18
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO	NO
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
VCEsat-Max	1.6 V	1.6 V	1.6 V	1.6 V
Is it lead-free?	Contains lead	-	Contains lead	Contains lead
ECCN code	EAR99	-	EAR99	EAR99
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED

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