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BZX55-C5V6

Description
Zener Diode, 5.6V V(Z), 5%, 0.5W,
CategoryDiscrete semiconductor    diode   
File Size127KB,4 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

BZX55-C5V6 Overview

Zener Diode, 5.6V V(Z), 5%, 0.5W,

BZX55-C5V6 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance25 Ω
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Nominal reference voltage5.6 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance5%
Working test current5 mA
BL
GALAXY ELECTRICAL
ZENER DIODES
FEATURES
Silicon planar power zener diodes
The
zener
voltages are graded according to the
international E 24 standard. Standard
zener
voltage
tolerance is ±5%. Replace suffix "C" with "B" for ±2%,
other voltage tolerance and other
zener
voltage are
available upon request.
BZX55 --- SERIES
POWER DISSIPATION: 500 mW
DO-34(GLASS)
MECHANICAL DATA
Case:DO-35, Glass Case
Terminals: Solderable per MIL-STD-202,
method
208
Polarity: Cathode
band
Marking: Type
number
Approx. Weight: 0.013 grams.
DO-35(GLASS)
MAXIMUM RATINGS AND
ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Zener current (see
Table
"Characteristics")
Pow er dissipation @ T
amb
=25
Junction temperature
Storage temperature
range
VALUE
UNIT
P
tot
T
J
T
s
500
1)
175
-55---+175
mW
SYMBOL
Thermal resistance junction to ambient
Forw ard voltage at I
F
=100mA
MIN
TYP
MAX
300
1)
1.0
UNIT
/W
V
www.galaxycn.com
R
θ
JA
V
F
NOTES:
(1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
Document Number 0284002
BL
GALAXY ELECTRICAL
1.

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Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
package instruction O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Reach Compliance Code unknown unknown unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE
Maximum dynamic impedance 25 Ω 85 Ω 85 Ω 50 Ω 55 Ω 8 Ω
JEDEC-95 code DO-35 DO-35 DO-35 DO-35 DO-35 DO-35
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Package body material GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Maximum power dissipation 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W
Nominal reference voltage 5.6 V 2.7 V 2.4 V 18 V 22 V 6.8 V
surface mount NO NO NO NO NO NO
technology ZENER ZENER ZENER ZENER ZENER ZENER
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum voltage tolerance 5% 5% 5% 5% 5% 5%
Working test current 5 mA 5 mA 5 mA 5 mA 5 mA 5 mA
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