BD675LEADFREE datasheet, PDF - EEWORLD Datasheet

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BD675LEADFREE: DescriptionPower Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size328KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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BD675LEADFREE Overview

Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

BD675LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
Parts packaging code	SIP
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	45 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	750
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	40 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1 MHz
VCEsat-Max	2.8 V

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BD675 SERIES

NPN SILICON

POWER DARLINGTON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BD675 Series

types are NPN Silicon Darlington Power Transistors,

available in the plastic TO-126 package, and are

designed for audio and video output applications.

MARKING: FULL PART NUMBER

SOT-126 CASE

BD675

MAXIMUM RATINGS:

(TC=25°C)

SYMBOL BD675A

Collector-Base Voltage

VCBO

45

Collector-Emitter Voltage

VCEO

45

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

ICEO

IEBO

BVCEO

VCE(SAT)

VBE(ON)

hFE

hfe

VEBO

IC

IB

PD

TJ, Tstg

Θ

JC

BD677

BD677A

60

BD679

BD679A

80

5.0

4.0

100

40

-65 to +150

3.13

MAX

200

2.0

500

2.0

45

60

80

100

120

2.5

2.8

2.5

750

1.0

BD681

100

BD683

120

UNITS

V

A

mA

W

°C

°C/W

UNITS

µA

mA

µA

mA

V

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCB=Rated VCBO

VCB=Rated VCBO, TC=100°C

VCE=½Rated VCEO

VEB=5.0V

IC=50mA (BD675, BD675A)

IC=50mA (BD677, BD677A)

IC=50mA (BD679, BD679A)

IC=50mA (BD681)

IC=50mA (BD683)

IC=1.5A, IB=30mA (Non-A)

IC=2.0A, IB=40mA (A)

VCE=3.0V, IC=1.5A (Non-A)

VCE=3.0V, IC=2.0A (A)

VCE=3.0V, IC=1.5A (Non-A)

VCE=3.0V, IC=2.0A (A)

VCE=3.0V, IC=1.5A, f=1.0MHz

R1 (14-June 2010)

BD675LEADFREE Related Products

	BD675LEADFREE	BD679ALEADFREE	BD677ALEADFREE	BD675ALEADFREE	BD683LEADFREE	BD677LEADFREE	BD679LEADFREE
Description	Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 4A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Parts packaging code	SIP	SIP	SIP	SIP	SIP	SIP	SIP
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3	3	3	3	3
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	4 A	4 A	4 A	4 A	4 A	4 A	4 A
Collector-emitter maximum voltage	45 V	80 V	60 V	45 V	120 V	60 V	80 V
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	750	750	750	750	750	750	750
JEDEC-95 code	TO-126	TO-126	TO-126	TO-126	TO-126	TO-126	TO-126
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e3	e3	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	40 W	40 W	40 W	40 W	40 W	40 W	40 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	10	10	10	10	10	10
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	1 MHz	1 MHz	1 MHz	1 MHz	1 MHz	1 MHz	1 MHz
VCEsat-Max	2.8 V	2.8 V	2.8 V	2.8 V	2.8 V	2.8 V	2.8 V

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