CMOS 1.8 V to 5.5 V, 2.5 Ω
SPDT Switch/2:1 Mux in Tiny SC70 Package
ADG779
FEATURES
1.8 V to 5.5 V single supply
2.5 Ω on resistance
0.75 Ω on-resistance flatness
−3 dB bandwidth >200 MHz
Rail-to-rail operation
6-lead SC70 package
Fast switching times
t
ON
20 ns
t
OFF
6 ns
Typical power consumption (<0.01 μW)
TTL/CMOS compatible
FUNCTIONAL BLOCK DIAGRAM
ADG779
S2
S1
D
IN
SWITCHES SHOWN FOR
A LOGIC 1 INPUT
02491-001
Figure 1.
APPLICATIONS
Battery-powered systems
Communication systems
Sample hold systems
Audio signal routing
Video switching
Mechanical reed relay replacements
GENERAL DESCRIPTION
The ADG779 is a monolithic CMOS SPDT (single-pole,
double-throw) switch. This switch is designed on a submicron
process that provides low power dissipation yet gives high
switching speed, low on resistance, and low leakage currents.
The ADG779 operates from a single supply range of 1.8 V to
5.5 V, making it ideal for use in battery-powered instruments
and with the new generation of DACs and ADCs from Analog
Devices, Inc.
Each switch of the ADG779 conducts equally well in both
directions when on. The ADG779 exhibits break-before-make
switching action.
Because of the advanced submicron process, −3 dB bandwidth
of greater than 200 MHz can be achieved.
The ADG779 is available in a 6-lead SC70 package.
PRODUCT HIGHLIGHTS
1.
2.
Tiny 6-Lead SC70 Package.
1.8 V to 5.5 V Single-Supply Operation. The ADG779
offers high performance, including low on resistance and
fast switching times, and is fully specified and guaranteed
with 3 V and 5 V supply rails.
Very Low R
ON
(5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V
operation, R
ON
is typically 40 Ω over the temperature range.
On-Resistance Flatness (R
FLAT (ON)
) (0.75 Ω typ).
−3 dB Bandwidth > 200 MHz.
Low Power Dissipation. CMOS construction ensures low
power dissipation.
14 ns Switching Times.
3.
4.
5.
6.
7.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
© 2005 Analog Devices, Inc. All rights reserved.
ADG779* PRODUCT PAGE QUICK LINKS
Last Content Update: 09/22/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
DESIGN RESOURCES
•
ADG779 Material Declaration
•
PCN-PDN Information
•
Quality And Reliability
•
Symbols and Footprints
DOCUMENTATION
Data Sheet
• ADG779: CMOS 1.8 V to 5.5 V, 2.5 Ω SPDT Switch/2:1 Mux
In Tiny SC70 Package Data Sheet
DISCUSSIONS
View all ADG779 EngineerZone Discussions.
TOOLS AND SIMULATIONS
•
ADG779 SPICE Macro Model
SAMPLE AND BUY
Visit the product page to see pricing options.
REFERENCE MATERIALS
Product Selection Guide
•
Switches and Multiplexers Product Selection Guide
Technical Articles
•
CMOS Switches Offer High Performance in Low Power,
Wideband Applications
•
Data-acquisition system uses fault protection
•
Enhanced Multiplexing for MEMS Optical Cross Connects
•
Temperature monitor measures three thermal zones
TECHNICAL SUPPORT
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number.
DOCUMENT FEEDBACK
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ADG779
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
Pin Configuration and Function Descriptions..............................6
Terminology .......................................................................................7
Typical Performance Characteristics ..............................................8
Test Circuits..................................................................................... 10
Outline Dimensions ....................................................................... 12
Ordering Guide .......................................................................... 12
REVISION HISTORY
10/05—Rev. 0 to Rev. A
Updated Format..................................................................Universal
Changes to Table 1............................................................................ 3
Changes to Table 2............................................................................ 4
Changes to Table 3............................................................................ 5
Changes to Terminology Section.................................................... 7
Changes to Ordering Guide .......................................................... 12
7/01—Revision 0: Initial Version
Rev. A | Page 2 of 12
ADG779
SPECIFICATIONS
V
DD
= 5 V ± 10%, GND = 0 V
1
Table 1.
B Version
−40°C to
+85°C
0 V to V
DD
2.5
5
0.1
0.75
1.2
LEAKAGE CURRENTS
2
Source Off Leakage I
S
(Off )
Channel On Leakage I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
S
(Off )
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
2
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On-Resistance Match Between Channels (ΔR
ON
)
On-Resistance Flatness (R
FLAT (ON)
)
25°C
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA typ
V min
V max
μA typ
μA max
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
Test Conditions/Comments
V
S
= 0 V to V
DD
, I
S
= −10 mA, see Figure 12
V
S
= 0 V to V
DD
, I
S
= −10 mA
V
S
= 0 V to V
DD
, I
S
= −10 mA
V
DD
= 5.5 V
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V, see Figure 13
V
S
= V
D
= 1 V, or V
S
= V
D
= 4.5 V, see Figure 14
6
0.8
±0.01
±0.01
±0.05
±0.05
2.4
0.8
0.005
±0.1
14
20
3
6
8
1
−67
−87
−62
−82
200
7
27
V
IN
= V
INL
or V
INH
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 3 V, see Figure 15
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 3 V, see Figure 15
R
L
= 300 Ω, C
L
= 35 pF
V
S1
= V
S2
= 3 V, see Figure 16
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 17
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 18
R
L
= 50 Ω, C
L
= 5 pF, see Figure 19
f = 1 MHz
f = 1 MHz
V
DD
= 5.5 V
Digital Inputs = 0 V or 5 V
0.001
1.0
μA typ
μA max
1
2
Temperature range is B Version, −40°C to +85°C.
Guaranteed by design, not subject to production test.
Rev. A | Page 3 of 12
ADG779
V
DD
= 3 V ± 10%, GND = 0 V
1
Table 2.
B Version
−40°C to
+85°C
0 V to V
DD
7
10
0.8
On-Resistance Flatness (R
FLAT (ON)
)
LEAKAGE CURRENTS
2
Source Off Leakage I
S
(Off )
Channel On Leakage I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth −3 dB
C
S
(Off )
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
2.5
±0.01
±0.01
±0.05
±0.05
2.0
0.8
0.005
±0.1
16
24
4
7
8
1
–67
–87
–62
–82
200
7
27
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On-Resistance Match Between Channels (ΔR
ON
)
25°C
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
nA typ
nA typ
V min
V max
μA typ
μA max
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
Test Conditions/Comments
6
0.1
V
S
= 0 V to V
DD
, I
S
= –10 mA, see Figure 12
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
DD
= 3.3 V
V
S
= 3 V/1 V, V
D
= 1 V/3 V, see Figure 13
V
S
= V
D
= 1 V, or V
S
= V
D
= 3 V, see Figure 14
V
IN
= V
INL
or V
INH
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 2 V, see Figure 15
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 2 V, see Figure 15
R
L
= 300 Ω, C
L
= 35 pF
V
S1
= V
S2
= 2 V, see Figure 16
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 17
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 18
R
L
= 50 Ω, C
L
= 5 pF, see Figure 19
f = 1 MHz
f = 1 MHz
V
DD
= 3.3 V
Digital Inputs = 0 V or 3 V
0.001
1.0
μA typ
μA max
1
2
Temperature range is B Version, −40°C to +85°C.
Guaranteed by design, not subject to production test.
Rev. A | Page 4 of 12
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