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Datasheet> All Categories > Discrete semiconductor> The transistor> 934000180115
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934000180115

Description
TRANSISTOR UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size49KB，7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance  
Download Datasheet Parametric View All

934000180115 Overview

TRANSISTOR UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP RF Small Signal

934000180115 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-73
package instructionPLASTIC, SC-73, 4 PIN
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
highest frequency bandC BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)5000 MHz

934000180115 Preview

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG31
PNP 5 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
1995 Sep 12
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
FEATURES
•
High output voltage capability
•
High gain bandwidth product
•
Good thermal stability
•
Gold metallization ensures
excellent reliability.
DESCRIPTION
PNP planar epitaxial transistor
mounted in a plastic SOT223
envelope.
It is intended for wideband amplifier
applications.
NPN complement is the BFG97.
1
2
3
4
PINNING
PIN
base
emitter
collector
DESCRIPTION
emitter
page
BFG31
4
1
Top view
2
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
V
o
PARAMETER
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power
gain
output voltage
up to T
s
= 135
°C
; note 1
I
C
=
−70
mA; V
CE
=
−10
V;
T
amb
= 25
°C
I
C
=
−70
mA; V
CE
=
−10
V;
f = 500 MHz; T
amb
= 25
°C
I
C
=
−70
mA; V
CE
=
−10
V;
f = 800 MHz; T
amb
= 25
°C
I
C
=
−100
mA; V
CE
=
−10
V;
R
L
= 75
Ω;
T
amb
= 25
°C
open base
CONDITIONS
−
−
−
25
−
−
−
MIN.
−
−
−
−
5.0
12
600
TYP.
MAX.
−15
−100
1
−
−
−
−
GHz
dB
mV
UNIT
V
mA
W
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 135
°C;
note 1
open emitter
open base
open collector
CONDITIONS
−
−
−
−
−
−65
−
MIN.
MAX.
−20
−15
−3
−100
1
150
175
UNIT
V
V
V
mA
W
°C
°C
1995 Sep 12
2
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
cb
C
eb
C
re
f
T
G
UM
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector-base capacitance
emitter-base capacitance
feedback capacitance
transition frequency
maximum unilateral power gain; note 1
CONDITIONS
open emitter; I
C
=
−10
mA
open base; I
C
=
−10
mA
open collector; I
E
=
−0.1
mA
I
E
= 0; V
CB
=
−10
V
I
C
=
−70
mA; V
CE
=
−10
V;
T
amb
= 25
°C
I
C
= 0; V
CB
=
−10
V; f = 1 MHz;
I
C
= 0; V
EB
=
−10
V; f = 1 MHz
I
C
= 0; V
CE
=
−10
V; f = 1 MHz;
T
amb
= 25
°C
I
C
=
−70
mA; V
CE
=
−10
V;
f = 500 MHz; T
amb
= 25
°C
I
C
=
−70
mA; V
CE
=
−10
V;
f = 500 MHz; T
amb
= 25
°C
I
C
=
−70
mA; V
CE
=
−10
V;
f = 800 MHz; T
amb
= 25
°C
V
o
V
o
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
2. d
im
=
−60
dB; I
C
=
−70
mA; V
CE
=
−10
V; R
L
= 75
Ω;
T
amb
= 25
°C;
V
p
= V
o
at d
im
=
−60
dB; f
p
= 850.25 MHz;
V
q
= V
o
−6
dB; f
q
= 858.25 MHz;
V
r
= V
o
−6
dB;f
r
= 860.25 MHz;
measured at f
(p+q−r)
= 848.25 MHz.
output voltage
output voltage
note 2
note 3
MIN.
−20
−18
−3
−
25
−
−
−
−
−
−
−
−
TYP.
−
−
−
−
−
1.8
5
1.6
5
16
12
600
550
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 135
°C;
note 1
BFG31
THERMAL RESISTANCE
40 K/W
MAX.
−
−
−
−1
−
−
−
−
−
−
−
−
−
UNIT
V
V
V
µA
pF
pF
pF
GHz
dB
dB
mV
mV
s
21 2
=
10 log ------------------------------------------------------------ dB.
(
1
–
s
11 2
) (
1
–
s
22 2
)
3. d
im
=
−60
dB (DIN 45004B); I
C
=
−70
mA; V
CE
=
−10
V; R
L
= 75
Ω;
T
amb
= 25
°C;
V
p
= V
o
= at d
im
=
−60
dB; f
p
= 445.25 MHz;
V
q
= V
o
−6
dB; f
q
= 453.25 MHz;
V
r
= V
o
−6
dB; f
r
= 455.25 MHz;
measured at f
(p+q−r)
= 443.25 MHz.
1995 Sep 12
3
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFG31
MBB344
MBB345
handbook, halfpage
P
1.2
tot
(W)
handbook, halfpage
80
1.0
h FE
60
0.8
0.6
40
0.4
20
0.2
0
0
50
100
150
200
T s ( o C)
0
0
100
I C (mA)
200
V
CE
=
−10
V; T
amb
= 25
°C.
Fig.3
Fig.2 Power derating curve.
DC current gain as a function of collector
current.
MBB346
handbook, halfpage
6
handbook, halfpage
8
MBB347
C re
fT
(GHz)
5
6
(pF)
4
4
3
2
2
1
0
10
20
VCE (V)
30
0
0
50
I C (mA)
100
f = 1 MHz; T
amb
= 25
°C
V
CE
=
−10
V; T
amb
= 25
°C.
Fig.4
Feedback capacitance as a function of
collector-emitter voltage.
Fig.5
Transition frequency as a function of
collector current.
1995 Sep 12
4
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFG31
MBB348
handbook, halfpage
40
d im
(dB)
handbook, halfpage
50
MBB349
45
d im
(dB)
55
50
55
60
60
65
40
60
80
I C (mA)
100
65
40
60
80
100
120
I C (mA)
V
CE
=
−10
V; V
o
= 650 mV; T
amb
= 25
°C;
f
(p+q−r)
= 443.25 MHz.
V
CE
=
−10
V; V
o
= 550 mV; T
amb
= 25
°C;
f
(p+q−r)
= 848.25 MHz.
Fig.6
Intermodulation distortion as a function
of collector current.
Fig.7
Intermodulation distortion as a function
of collector current.
MBB350
MBB351
handbook, halfpage
10
d2
handbook, halfpage
10
(dB)
20
d2
(dB)
20
30
30
40
40
50
50
60
10
30
50
70
90
110
I C (mA)
60
10
30
50
70
90
110
I C (mA)
V
CE
=
−10
V; V
o
= 50 dBmV; T
amb
= 25
°C;
f
(p+q)
= 450 MHz.
V
CE
=
−10
V; V
o
= 50 dBmV; T
amb
= 25
°C;
f
(p+q)
= 810 MHz.
Fig.8 Second order intermodulation distortion
as a function of collector current.
Fig.9
Second order intermodulation distortion
as a function of collector current.
1995 Sep 12
5
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