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1N4148

Description
0.2 A, SILICON, SIGNAL DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size94KB,2 Pages
ManufacturerETC2
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1N4148 Overview

0.2 A, SILICON, SIGNAL DIODE, DO-35

1N4148 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionHERMETIC SEALED, glass PACKAGE-2
stateTRANSFERRED
packaging shaperound
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsGlass
structuresingle
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit0.5000 W
Diode typeSignal diode
Maximum reverse recovery time0.0040 us
Maximum average forward current0.2000 A
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N4148
1N4148 SIGNAL DIODE
Absolute Maximum Ratings (Ta=25
°
C)
Items
Symbol Ratings Unit
Reverse Voltage
VR
75
V
Reverse Recovery
trr
4
ns
Time
Power Dissipation
P
500
mW
3.33mW/
°
C (25
°
C)
Forward Current
IF
150
mA
Junction Temp.
Tj
-65 to 175
°
C
Storage Temp.
Tstg -65 to 175
°
C
Mechanical Data
Items
Package
Case
Lead/Finish
Chip
Materials
DO-35
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
26 MIN
Dimensions in millimeters
Dimensions (DO-35
)
DO-35
26 MIN
0.457
DIA.
0.559
4.2
max.
2.0
DIA.
max.
Electrical Characteristics (Ta=25
°
C)
Ratings
Minimum Breakdown Voltage
IR= 5.0uA
IR= 100uA
Peak Forward Surge Current PW= 1sec.
Maximum Forward Voltage
IF= 10mA
Maximum Reverse Current
VR= 20V
VR= 75V
VR= 20V, Tj= 150
°
C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100
W
Symbol
BV
Ratings
75
100
2.0
1.0
Unit
V
IFsurge
VF
IR
A
V
uA
0.025
5.0
50
Cj
4
trr
4
ns
pF

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Description 0.2 A, SILICON, SIGNAL DIODE, DO-35 0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35 0.2 A, SILICON, SIGNAL DIODE, DO-35 0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35 0.2 A, SILICON, SIGNAL DIODE, DO-35
Number of terminals 2 - 2 2 2
Number of components 1 - 1 1 1
Processing package description HERMETIC SEALED, glass PACKAGE-2 - HERMETIC SEALED, glass PACKAGE-2 HERMETIC SEALED, glass, MINIMELF-2 HERMETIC SEALED, glass PACKAGE-2
state TRANSFERRED - TRANSFERRED ACTIVE TRANSFERRED
packaging shape round - round round round
Package Size SMALL OUTLINE - SMALL OUTLINE LONG FORM SMALL OUTLINE
surface mount Yes - Yes - Yes
Terminal form GULL WING - GULL WING Wire GULL WING
terminal coating tin lead - tin lead MATTE Tin tin lead
Terminal location pair - pair AXIAL pair
Packaging Materials Glass - Glass Glass Glass
structure single - single single single
Shell connection isolation - isolation isolation isolation
Diode component materials silicon - silicon silicon silicon
Maximum power consumption limit 0.5000 W - 0.5000 W 0.5000 W 0.5000 W
Diode type Signal diode - Signal diode Signal diode Signal diode
Maximum reverse recovery time 0.0040 us - 0.0040 us 0.0040 us 0.0040 us
Maximum average forward current 0.2000 A - 0.2000 A 0.1500 A 0.2000 A
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