1N4148-F3000 datasheet, PDF - EEWORLD Datasheet

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1N4148-F3000: Description0.2 A, SILICON, SIGNAL DIODE, DO-35; Categorysemiconductor Discrete semiconductor; File Size94KB，2 Pages; ManufacturerETC2

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1N4148-F3000 Overview

0.2 A, SILICON, SIGNAL DIODE, DO-35

1N4148-F3000 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	HERMETIC SEALED, glass PACKAGE-2
state	TRANSFERRED
packaging shape	round
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Glass
structure	single
Shell connection	isolation
Diode component materials	silicon
Maximum power consumption limit	0.5000 W
Diode type	Signal diode
Maximum reverse recovery time	0.0040 us
Maximum average forward current	0.2000 A

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RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

1N4148

1N4148 SIGNAL DIODE

Absolute Maximum Ratings (Ta=25

Items

Symbol Ratings Unit

Reverse Voltage

Reverse Recovery

trr

Time

Power Dissipation

500

3.33mW/

C (25

Forward Current

150

Junction Temp.

-65 to 175

Storage Temp.

Tstg -65 to 175

Mechanical Data

Items

Package

Case

Lead/Finish

Chip

Materials

DO-35

Hermetically sealed glass

Double stud/Solder Plating

Glass Passivated

26 MIN

Dimensions in millimeters

Dimensions (DO-35

)

DO-35

26 MIN

0.457

DIA.

0.559

4.2

max.

2.0

DIA.

max.

Electrical Characteristics (Ta=25

Ratings

Minimum Breakdown Voltage

IR= 5.0uA

IR= 100uA

Peak Forward Surge Current PW= 1sec.

Maximum Forward Voltage

IF= 10mA

Maximum Reverse Current

VR= 20V

VR= 75V

VR= 20V, Tj= 150

Maximum Junction Capacitance

VR= 0, f= 1 MHz

Maximum Reverse Recovery Time

IF= 10mA, VR= 6V, IRR= 1mA, RL= 100

Symbol

Ratings

100

2.0

1.0

Unit

IFsurge

0.025

5.0

trr

1N4148-F3000 Related Products

	1N4148-F3000	1N4148	1N4148-B	1N4148-T	PCSBOX
Description	0.2 A, SILICON, SIGNAL DIODE, DO-35	0.2 A, SILICON, SIGNAL DIODE, DO-35	0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35	0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35	0.2 A, SILICON, SIGNAL DIODE, DO-35
Number of terminals	2	2	-	2	2
Number of components	1	1	-	1	1
Processing package description	HERMETIC SEALED, glass PACKAGE-2	HERMETIC SEALED, glass PACKAGE-2	-	HERMETIC SEALED, glass, MINIMELF-2	HERMETIC SEALED, glass PACKAGE-2
state	TRANSFERRED	TRANSFERRED	-	ACTIVE	TRANSFERRED
packaging shape	round	round	-	round	round
Package Size	SMALL OUTLINE	SMALL OUTLINE	-	LONG FORM	SMALL OUTLINE
surface mount	Yes	Yes	-	-	Yes
Terminal form	GULL WING	GULL WING	-	Wire	GULL WING
terminal coating	tin lead	tin lead	-	MATTE Tin	tin lead
Terminal location	pair	pair	-	AXIAL	pair
Packaging Materials	Glass	Glass	-	Glass	Glass
structure	single	single	-	single	single
Shell connection	isolation	isolation	-	isolation	isolation
Diode component materials	silicon	silicon	-	silicon	silicon
Maximum power consumption limit	0.5000 W	0.5000 W	-	0.5000 W	0.5000 W
Diode type	Signal diode	Signal diode	-	Signal diode	Signal diode
Maximum reverse recovery time	0.0040 us	0.0040 us	-	0.0040 us	0.0040 us
Maximum average forward current	0.2000 A	0.2000 A	-	0.1500 A	0.2000 A

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