PCSBOX datasheet, PDF - EEWORLD Datasheet

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PCSBOX: Description0.2 A, SILICON, SIGNAL DIODE, DO-35; Categorysemiconductor Discrete semiconductor; File Size94KB，2 Pages; ManufacturerETC2

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PCSBOX Overview

0.2 A, SILICON, SIGNAL DIODE, DO-35

PCSBOX Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	HERMETIC SEALED, glass PACKAGE-2
state	TRANSFERRED
packaging shape	round
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Glass
structure	single
Shell connection	isolation
Diode component materials	silicon
Maximum power consumption limit	0.5000 W
Diode type	Signal diode
Maximum reverse recovery time	0.0040 us
Maximum average forward current	0.2000 A

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RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

1N4148

1N4148 SIGNAL DIODE

Absolute Maximum Ratings (Ta=25

°

C)

Items

Symbol Ratings Unit

Reverse Voltage

VR

75

V

Reverse Recovery

trr

4

ns

Time

Power Dissipation

P

500

mW

3.33mW/

°

C (25

°

C)

Forward Current

IF

150

mA

Junction Temp.

Tj

-65 to 175

°

C

Storage Temp.

Tstg -65 to 175

°

C

Mechanical Data

Items

Package

Case

Lead/Finish

Chip

Materials

DO-35

Hermetically sealed glass

Double stud/Solder Plating

Glass Passivated

26 MIN

Dimensions in millimeters

Dimensions (DO-35

)

DO-35

26 MIN

0.457

DIA.

0.559

4.2

max.

2.0

DIA.

max.

Electrical Characteristics (Ta=25

°

C)

Ratings

Minimum Breakdown Voltage

IR= 5.0uA

IR= 100uA

Peak Forward Surge Current PW= 1sec.

Maximum Forward Voltage

IF= 10mA

Maximum Reverse Current

VR= 20V

VR= 75V

VR= 20V, Tj= 150

°

C

Maximum Junction Capacitance

VR= 0, f= 1 MHz

Maximum Reverse Recovery Time

IF= 10mA, VR= 6V, IRR= 1mA, RL= 100

W

Symbol

BV

Ratings

75

100

2.0

1.0

Unit

V

IFsurge

VF

IR

A

V

uA

0.025

5.0

50

Cj

4

trr

4

ns

pF

PCSBOX Related Products

	PCSBOX	1N4148	1N4148-B	1N4148-F3000	1N4148-T
Description	0.2 A, SILICON, SIGNAL DIODE, DO-35	0.2 A, SILICON, SIGNAL DIODE, DO-35	0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35	0.2 A, SILICON, SIGNAL DIODE, DO-35	0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35
Number of terminals	2	2	-	2	2
Number of components	1	1	-	1	1
Processing package description	HERMETIC SEALED, glass PACKAGE-2	HERMETIC SEALED, glass PACKAGE-2	-	HERMETIC SEALED, glass PACKAGE-2	HERMETIC SEALED, glass, MINIMELF-2
state	TRANSFERRED	TRANSFERRED	-	TRANSFERRED	ACTIVE
packaging shape	round	round	-	round	round
Package Size	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	LONG FORM
surface mount	Yes	Yes	-	Yes	-
Terminal form	GULL WING	GULL WING	-	GULL WING	Wire
terminal coating	tin lead	tin lead	-	tin lead	MATTE Tin
Terminal location	pair	pair	-	pair	AXIAL
Packaging Materials	Glass	Glass	-	Glass	Glass
structure	single	single	-	single	single
Shell connection	isolation	isolation	-	isolation	isolation
Diode component materials	silicon	silicon	-	silicon	silicon
Maximum power consumption limit	0.5000 W	0.5000 W	-	0.5000 W	0.5000 W
Diode type	Signal diode	Signal diode	-	Signal diode	Signal diode
Maximum reverse recovery time	0.0040 us	0.0040 us	-	0.0040 us	0.0040 us
Maximum average forward current	0.2000 A	0.2000 A	-	0.2000 A	0.1500 A

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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