X10SG datasheet, PDF - EEWORLD Datasheet

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X10SG: DescriptionRectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size85KB，2 Pages; ManufacturerVOLTAGE MULTIPLIERS INC.; Websitehttp://www.voltagemultipliers.com/; Environmental Compliance

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X10SG Overview

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon,

X10SG Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	VOLTAGE MULTIPLIERS INC.
package instruction	E-LALF-W2
Reach Compliance Code	compliant
ECCN code	EAR99
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JESD-30 code	E-LALF-W2
Maximum non-repetitive peak forward current	25 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	1.5 A
Package body material	GLASS
Package shape	ELLIPTICAL
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse recovery time	3 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

X10SG Preview

600 V - 1,000 V Rectifiers

1.5 A Forward Current

150 ns - 3000 ns Recovery Time

AXIAL LEADED

HERMETICALLY SEALED

X06FG X10FG

X06SG X10SG

3

ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS

Part

Working

Number Reverse

Voltage

(Vrwm)

Average

Rectified

Current

(Io)

Reverse

Current

@ Vrwm

(Ir)

Forward

Voltage

1 Cycle Repetitive Reverse

Surge

Recovery

Current

Time

tp=8.3ms

(3)

(Ifsm)

(Ifrm)

(Trr)

25°C

Amps

25°C

Amps

25°C

ns

Thermal

Impedance

Junction

Cap.

@50VDC

@ 1kHZ

(Cj)

25°C

pF

(Vf)

25°C

Volts

Amps

u

J-L

L=.125 L=.375 L=.500

°C/W

55°C(1) 100°C(2) 25°C 100°C

Volts

X06FG

X10FG

X06SG

X10SG

Amps

µA

600

1000

600

1000

1.50

0.75

1.0

20

1.5

1.3

1.0

3.0

25

5

150

3000

18

38

45

16

(1)TL=55°C L=0.375" (2)TL=100°C L=0.375" (3)If=0.5A, Ir=1.0A, Irr=0.25A • Op.Temp.= -65°C to +175°C Stg.Temp.= -65°C to +200°C

.110(2.8)

MAX.

.185(4.7)

MAX.

1.00(25.4)

MIN.

.030 ±.003

(.77 ±.06)

Dimensions: In. (mm) • All temperatures are ambient unless otherwise noted. • Data subject to change without notice.

VOLTAGE MULTIPLIERS INC.

8711 W. Roosevelt Ave.

Visalia, CA 93291

TEL

559-651-1402

FAX

559-651-0740

www.voltagemultipliers.com

69

X06FG X10FG X06SG X10SG

POWER DERATING

20.0

Maximum

Maxumum Power Dissipation (W)

L=0.000"

L=0.100"

3.00

2.50

Forward Voltage (V)

2.00

1.50

1.00

0.50

0.00

0

25

50

75

100

125

Lead

Temperature (°C)

Temperature (C)

150

175

0.0

TYPICAL FORWARD VOLTAGE

VS. FORWARD CURRENT AT 25°C

15.0

L=0.200"

X10FG

10.0

X10SG

5.0

L=0.300"

L=0.400"

L=0.500"

0.0

1.0

2.0

3.0

Forward Current (A)

4.0

5.0

1000

REVERSE CURRENT

VS. TEMPERATURE AT Vrwm

45

40

Junction Capacitance (pF)

35

30

25

20

15

10

5

TYPICAL JUNCTION CAPACITANCE

VS. REVERSE VOLTAGE AT 25°C

Reverse Current (uA)

100

10

1

25

50

75

100

Temperature

(C)

Temperature

(°C)

125

150

0

20

40

60

Reverse Bias Voltage (V)

80

100

250

TYPICAL REVERSE RECOVERY TIME

VS. TEMPERATURE

2000

1900

TYPICAL REVERSE RECOVERY TIME

VS. TEMPERATURE

Reverse Recovery Time (ns)

200

1800

1700

1600

1500

1400

1300

1200

1100

X10SG

150

X10FG

100

50

0

25

50

75

100

Temperature (°C)

Temperature (C)

125

150

1000

25

50

75

100

Temperature (°C)

Temperature (C)

125

150

70

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X10SG Related Products

	X10SG	X06FG	X06SG	X10FG
Description	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon,
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	VOLTAGE MULTIPLIERS INC.	VOLTAGE MULTIPLIERS INC.	VOLTAGE MULTIPLIERS INC.	VOLTAGE MULTIPLIERS INC.
package instruction	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2
Reach Compliance Code	compliant	compliant	compliant	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V	1.5 V	1.3 V	1.5 V
JESD-30 code	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2
Maximum non-repetitive peak forward current	25 A	25 A	25 A	25 A
Number of components	1	1	1	1
Phase	1	1	1	1
Number of terminals	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Maximum output current	1.5 A	1.5 A	1.5 A	1.5 A
Package body material	GLASS	GLASS	GLASS	GLASS
Package shape	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	1000 V	600 V	600 V	1000 V
Maximum reverse recovery time	3 µs	0.15 µs	3 µs	0.15 µs
surface mount	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL

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