IDT7MC156S25CS datasheet, PDF - EEWORLD Datasheet

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IDT7MC156S25CS: DescriptionSRAM Module, 256KX1, 25ns, CMOS; Categorystorage storage; File Size146KB，6 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT7MC156S25CS Overview

SRAM Module, 256KX1, 25ns, CMOS

IDT7MC156S25CS Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum access time	25 ns
I/O type	SEPARATE
JESD-30 code	R-XSMA-T28
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	SRAM MODULE
memory width	1
Number of functions	1
Number of terminals	28
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX1
Output characteristics	3-STATE
Package body material	UNSPECIFIED
Encapsulate equivalent code	SIP28,.1
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.08 A
Minimum standby current	4.5 V
Maximum slew rate	0.33 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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IDT7MC156S25CS Related Products

	IDT7MC156S25CS	IDT7MC156S35CS	IDT7MC156S30CS	IDT7MC156S55CS	IDT7MC156S45CS
Description	SRAM Module, 256KX1, 25ns, CMOS	SRAM Module, 256KX1, 35ns, CMOS	SRAM Module, 256KX1, 30ns, CMOS	SRAM Module, 256KX1, 55ns, CMOS	SRAM Module, 256KX1, 45ns, CMOS
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	25 ns	35 ns	30 ns	55 ns	45 ns
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-XSMA-T28	R-XSMA-T28	R-XSMA-T28	R-XSMA-T28	R-XSMA-T28
JESD-609 code	e0	e0	e0	e0	e0
memory density	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	1	1	1	1	1
Number of functions	1	1	1	1	1
Number of terminals	28	28	28	28	28
word count	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C
organize	256KX1	256KX1	256KX1	256KX1	256KX1
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Encapsulate equivalent code	SIP28,.1	SIP28,.1	SIP28,.1	SIP28,.1	SIP28,.1
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.08 A	0.08 A	0.08 A	0.08 A	0.08 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	0.33 mA	0.33 mA	0.33 mA	0.33 mA	0.33 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	IDT (Integrated Device Technology)	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)

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