SRAM Module, 256KX1, 30ns, CMOS
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Maximum access time | 30 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-XSMA-T28 |
| JESD-609 code | e0 |
| memory density | 262144 bit |
| Memory IC Type | SRAM MODULE |
| memory width | 1 |
| Number of functions | 1 |
| Number of terminals | 28 |
| word count | 262144 words |
| character code | 256000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 256KX1 |
| Output characteristics | 3-STATE |
| Package body material | UNSPECIFIED |
| Encapsulate equivalent code | SIP28,.1 |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Parallel/Serial | SERIAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.08 A |
| Minimum standby current | 4.5 V |
| Maximum slew rate | 0.33 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| IDT7MC156S30CS | IDT7MC156S35CS | IDT7MC156S25CS | IDT7MC156S55CS | IDT7MC156S45CS | |
|---|---|---|---|---|---|
| Description | SRAM Module, 256KX1, 30ns, CMOS | SRAM Module, 256KX1, 35ns, CMOS | SRAM Module, 256KX1, 25ns, CMOS | SRAM Module, 256KX1, 55ns, CMOS | SRAM Module, 256KX1, 45ns, CMOS |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum access time | 30 ns | 35 ns | 25 ns | 55 ns | 45 ns |
| I/O type | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 code | R-XSMA-T28 | R-XSMA-T28 | R-XSMA-T28 | R-XSMA-T28 | R-XSMA-T28 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 |
| memory density | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| Memory IC Type | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| memory width | 1 | 1 | 1 | 1 | 1 |
| Number of functions | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 28 | 28 | 28 | 28 | 28 |
| word count | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
| character code | 256000 | 256000 | 256000 | 256000 | 256000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Encapsulate equivalent code | SIP28,.1 | SIP28,.1 | SIP28,.1 | SIP28,.1 | SIP28,.1 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| Parallel/Serial | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| power supply | 5 V | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum standby current | 0.08 A | 0.08 A | 0.08 A | 0.08 A | 0.08 A |
| Minimum standby current | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Maximum slew rate | 0.33 mA | 0.33 mA | 0.33 mA | 0.33 mA | 0.33 mA |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Maker | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
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