HC6216JSHCC datasheet, PDF - EEWORLD Datasheet

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HC6216JSHCC: DescriptionStandard SRAM, 2KX8, 100ns, CMOS, CDIP24, CERAMIC, DIP-24; Categorystorage storage; File Size492KB，14 Pages; ManufacturerHoneywell; Websitehttp://www.ssec.honeywell.com/

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HC6216JSHCC Overview

Standard SRAM, 2KX8, 100ns, CMOS, CDIP24, CERAMIC, DIP-24

HC6216JSHCC Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Honeywell
Parts packaging code	DIP
package instruction	DIP, DIP24,.6
Contacts	24
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	100 ns
Other features	RADIATION-HARDENED SRAM
I/O type	COMMON
JESD-30 code	R-CDIP-T24
JESD-609 code	e0
length	30.48 mm
memory density	16384 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	24
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	2KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Filter level	38535V;38534K;883S
Maximum seat height	4.318 mm
Maximum standby current	0.00009 A
Minimum standby current	2.5 V
Maximum slew rate	0.007 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
total dose	1M Rad(Si) V
width	15.24 mm

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HC6216JSHCC Related Products

	HC6216JSHCC	HC6216KCH-T	HC6216JCH-C	HC6216JCH-T	HC6216KSHCC	HC6216JSHCT	HC6216KSHCT
Description	Standard SRAM, 2KX8, 100ns, CMOS, CDIP24, CERAMIC, DIP-24	Standard SRAM, 2KX8, 100ns, CMOS, CDFP24, CERAMIC, FP-24	Standard SRAM, 2KX8, 100ns, CMOS, CDIP24, CERAMIC, DIP-24	Standard SRAM, 2KX8, 100ns, CMOS, CDIP24, CERAMIC, DIP-24	Standard SRAM, 2KX8, 100ns, CMOS, CDFP24, CERAMIC, FP-24	Standard SRAM, 2KX8, 100ns, CMOS, CDIP24, CERAMIC, DIP-24	Standard SRAM, 2KX8, 100ns, CMOS, CDFP24, CERAMIC, FP-24
Parts packaging code	DIP	DFP	DIP	DIP	DFP	DIP	DFP
package instruction	DIP, DIP24,.6	DFP,	DIP,	DIP,	DFP, FL24,.4	DIP, DIP24,.6	DFP, FL24,.4
Contacts	24	24	24	24	24	24	24
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	100 ns	100 ns	100 ns	100 ns	100 ns	100 ns	100 ns
Other features	RADIATION-HARDENED SRAM	RADIATION-HARDENED SRAM	RADIATION-HARDENED SRAM	RADIATION-HARDENED SRAM	RADIATION-HARDENED SRAM	RADIATION-HARDENED SRAM	RADIATION-HARDENED SRAM
JESD-30 code	R-CDIP-T24	R-CDFP-F24	R-CDIP-T24	R-CDIP-T24	R-CDFP-F24	R-CDIP-T24	R-CDFP-F24
length	30.48 mm	15.1384 mm	30.48 mm	30.48 mm	15.1384 mm	30.48 mm	15.1384 mm
memory density	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1
Number of terminals	24	24	24	24	24	24	24
word count	2048 words	2048 words	2048 words	2048 words	2048 words	2048 words	2048 words
character code	2000	2000	2000	2000	2000	2000	2000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	2KX8	2KX8	2KX8	2KX8	2KX8	2KX8	2KX8
Exportable	YES	YES	YES	YES	YES	YES	YES
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP	DFP	DIP	DIP	DFP	DIP	DFP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	FLATPACK	IN-LINE	IN-LINE	FLATPACK	IN-LINE	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	4.318 mm	3.175 mm	4.318 mm	4.318 mm	3.175 mm	4.318 mm	3.175 mm
Minimum standby current	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	YES	NO	NO	YES	NO	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	THROUGH-HOLE	FLAT	THROUGH-HOLE	THROUGH-HOLE	FLAT	THROUGH-HOLE	FLAT
Terminal pitch	2.54 mm	1.27 mm	2.54 mm	2.54 mm	1.27 mm	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	15.24 mm	10.16 mm	15.24 mm	15.24 mm	10.16 mm	15.24 mm	10.16 mm
Is it lead-free?	Contains lead	-	-	-	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	-	-	-	incompatible	incompatible	incompatible
Maker	Honeywell	Honeywell	-	Honeywell	-	Honeywell	Honeywell
I/O type	COMMON	-	-	-	COMMON	COMMON	COMMON
JESD-609 code	e0	-	-	-	e0	e0	e0
Output characteristics	3-STATE	-	-	-	3-STATE	3-STATE	3-STATE
Encapsulate equivalent code	DIP24,.6	-	-	-	FL24,.4	DIP24,.6	FL24,.4
Filter level	38535V;38534K;883S	-	-	-	38535V;38534K;883S	38535V;38534K;883S	38535V;38534K;883S
Maximum standby current	0.00009 A	-	-	-	0.00009 A	0.00009 A	0.00009 A
Maximum slew rate	0.007 mA	-	-	-	0.007 mA	0.007 mA	0.007 mA
Terminal surface	Tin/Lead (Sn/Pb)	-	-	-	TIN LEAD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
total dose	1M Rad(Si) V	-	-	-	1M Rad(Si) V	1M Rad(Si) V	1M Rad(Si) V

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