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1N5415

Description
3 A, 50 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size76KB,1 Pages
ManufacturerDigitron
Websitehttp://www.digitroncorp.com
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1N5415 Overview

3 A, 50 V, SILICON, RECTIFIER DIODE

1N5415 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDigitron
package instructionO-XALF-W2
Reach Compliance Codeunknow
applicationFAST RECOVERY
Minimum breakdown voltage55 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
JESD-30 codeO-XALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage50 V
Maximum reverse current1 µA
Maximum reverse recovery time0.15 µs
Reverse test voltage50 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
DIGITRON SEMICONDUCTORS
1N5415 – 1N5420
MAXIMUM RATINGS
PEAK INVERSE VOLTAGE
50V
100V
200V
400V
500V
600V
Maximum Output D.C. Current
@ T
A
=55°C:
@ T
A
=100°C:
TYPE
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
3.0A
2.0A
80A
-65°C to +175°C
-65°C to +200°C
20°C/W
FAST SWITCHING RECTIFIER
GLASS PASSIVATED
Non-Repetitive Sinusoidal: Surge Current
(8.3ms)
Operating Temperature Range:
Storage Temperature Range:
Thermal Resistance o
@ L
⅜”
ELECTRICAL CHARACTERISTICS
TYPE
PIV
MINIMUM
REVERSE
BREAKDOWN
VOLTAGE @
50μA
55V
110V
220V
440V
550V
660V
FORWARD
VOLTAGE
MIN.
0.6V
MAX.
1.5V (pk)
1.0μA
@ 9Adc
tp=300μs
20μA
MAXIMUM REVERSE
CURRNET
25°C
100°C
MAXIMUM
REVERSE
RECOVERY TIME
150
150
150
150
250
400
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
50V
100V
200V
400V
500V
600V
MECHANICAL CHARACTERISTICS
CASE:
MARKING:
POLARITY:
Glass
Body Painted, Alpha Numeric
Cathode Band
Ltr.
Inches
Min
BD
BL
LD
LL
-
-
Max
0.145
0.300
0.040 ± 0.003
0.975
-
Min
-
-
Millimeters
Max
3.680
7.620
1.020 ± 0.0300
24.800
-
Dimensions
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20120705

1N5415 Related Products

1N5415 1N5416 1N5417 1N5418 1N5419 1N5420
Description 3 A, 50 V, SILICON, RECTIFIER DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE 3 A, 500 V, SILICON, RECTIFIER DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Maker Digitron Digitron Digitron Digitron Digitron Digitron
Reach Compliance Code unknow unknow unknow unknow unknow unknow
application FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
Minimum breakdown voltage 55 V 110 V 220 V 440 V 550 V 660 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
JESD-30 code O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2
JESD-609 code e0 e0 e0 e0 e0 e0
Maximum non-repetitive peak forward current 80 A 80 A 80 A 80 A 80 A 80 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 50 V 100 V 200 V 400 V 500 V 600 V
Maximum reverse current 1 µA 1 µA 1 µA 1 µA 1 µA 1 µA
Maximum reverse recovery time 0.15 µs 0.15 µs 0.15 µs 0.15 µs 0.25 µs 0.4 µs
Reverse test voltage 50 V 100 V 200 V 400 V 500 V 600 V
surface mount NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
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