1N5417 datasheet, PDF - EEWORLD Datasheet

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1N5417: Description3 A, 200 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size76KB，1 Pages; ManufacturerDigitron; Websitehttp://www.digitroncorp.com

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1N5417 Overview

3 A, 200 V, SILICON, RECTIFIER DIODE

1N5417 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Digitron
Reach Compliance Code	unknow
application	FAST RECOVERY
Minimum breakdown voltage	220 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V
JESD-30 code	O-XALF-W2
JESD-609 code	e0
Maximum non-repetitive peak forward current	80 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	3 A
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	1 µA
Maximum reverse recovery time	0.15 µs
Reverse test voltage	200 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	AXIAL

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DIGITRON SEMICONDUCTORS

1N5415 – 1N5420

MAXIMUM RATINGS

PEAK INVERSE VOLTAGE

50V

100V

200V

400V

500V

600V

Maximum Output D.C. Current

@ T

=55°C:

@ T

=100°C:

TYPE

1N5415

1N5416

1N5417

1N5418

1N5419

1N5420

3.0A

2.0A

80A

-65°C to +175°C

-65°C to +200°C

20°C/W

FAST SWITCHING RECTIFIER

GLASS PASSIVATED

Non-Repetitive Sinusoidal: Surge Current

(8.3ms)

Operating Temperature Range:

Storage Temperature Range:

Thermal Resistance o

Ω

@ L

⅜”

ELECTRICAL CHARACTERISTICS

TYPE

PIV

MINIMUM

REVERSE

BREAKDOWN

VOLTAGE @

50μA

55V

110V

220V

440V

550V

660V

FORWARD

VOLTAGE

MIN.

0.6V

MAX.

1.5V (pk)

1.0μA

@ 9Adc

tp=300μs

20μA

MAXIMUM REVERSE

CURRNET

25°C

100°C

MAXIMUM

REVERSE

RECOVERY TIME

150

250

400

1N5415

1N5416

1N5417

1N5418

1N5419

1N5420

50V

100V

200V

400V

500V

600V

MECHANICAL CHARACTERISTICS

CASE:

MARKING:

POLARITY:

Glass

Body Painted, Alpha Numeric

Cathode Band

Ltr.

Inches

Min

Max

0.145

0.300

0.040 ± 0.003

0.975

Min

Millimeters

Max

3.680

7.620

1.020 ± 0.0300

24.800

Dimensions

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

Rev. 20120705

1N5417 Related Products

	1N5417	1N5415	1N5416	1N5418	1N5419	1N5420
Description	3 A, 200 V, SILICON, RECTIFIER DIODE	3 A, 50 V, SILICON, RECTIFIER DIODE	3 A, 100 V, SILICON, RECTIFIER DIODE	3 A, 400 V, SILICON, RECTIFIER DIODE	3 A, 500 V, SILICON, RECTIFIER DIODE	3 A, 600 V, SILICON, RECTIFIER DIODE
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Digitron	Digitron	Digitron	Digitron	Digitron	Digitron
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
application	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
Minimum breakdown voltage	220 V	55 V	110 V	440 V	550 V	660 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
JESD-30 code	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2
JESD-609 code	e0	e0	e0	e0	e0	e0
Maximum non-repetitive peak forward current	80 A	80 A	80 A	80 A	80 A	80 A
Number of components	1	1	1	1	1	1
Phase	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	200 V	50 V	100 V	400 V	500 V	600 V
Maximum reverse current	1 µA	1 µA	1 µA	1 µA	1 µA	1 µA
Maximum reverse recovery time	0.15 µs	0.15 µs	0.15 µs	0.15 µs	0.25 µs	0.4 µs
Reverse test voltage	200 V	50 V	100 V	400 V	500 V	600 V
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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