3 A, 500 V, SILICON, RECTIFIER DIODE
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Digitron |
| Reach Compliance Code | unknow |
| application | FAST RECOVERY |
| Minimum breakdown voltage | 550 V |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.5 V |
| JESD-30 code | O-XALF-W2 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak forward current | 80 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 3 A |
| Package body material | UNSPECIFIED |
| Package shape | ROUND |
| Package form | LONG FORM |
| Maximum repetitive peak reverse voltage | 500 V |
| Maximum reverse current | 1 µA |
| Maximum reverse recovery time | 0.25 µs |
| Reverse test voltage | 500 V |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | AXIAL |

| 1N5419 | 1N5415 | 1N5416 | 1N5417 | 1N5418 | 1N5420 | |
|---|---|---|---|---|---|---|
| Description | 3 A, 500 V, SILICON, RECTIFIER DIODE | 3 A, 50 V, SILICON, RECTIFIER DIODE | 3 A, 100 V, SILICON, RECTIFIER DIODE | 3 A, 200 V, SILICON, RECTIFIER DIODE | 3 A, 400 V, SILICON, RECTIFIER DIODE | 3 A, 600 V, SILICON, RECTIFIER DIODE |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | Digitron | Digitron | Digitron | Digitron | Digitron | Digitron |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
| application | FAST RECOVERY | FAST RECOVERY | FAST RECOVERY | FAST RECOVERY | FAST RECOVERY | FAST RECOVERY |
| Minimum breakdown voltage | 550 V | 55 V | 110 V | 220 V | 440 V | 660 V |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
| JESD-30 code | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
| Maximum non-repetitive peak forward current | 80 A | 80 A | 80 A | 80 A | 80 A | 80 A |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Phase | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Minimum operating temperature | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C |
| Maximum output current | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Maximum repetitive peak reverse voltage | 500 V | 50 V | 100 V | 200 V | 400 V | 600 V |
| Maximum reverse current | 1 µA | 1 µA | 1 µA | 1 µA | 1 µA | 1 µA |
| Maximum reverse recovery time | 0.25 µs | 0.15 µs | 0.15 µs | 0.15 µs | 0.15 µs | 0.4 µs |
| Reverse test voltage | 500 V | 50 V | 100 V | 200 V | 400 V | 600 V |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |