ASMT-QWBE-Nxxxx
Super 0.5W Cool White Power PLCC-4
Surface Mount LED Indicator
Data Sheet
Description
The Super 0.5W Cool White Power PLCC-4 SMT LED is first
Cool white mid-Power PLCC-4 SMT LEDs using InGaN
chip technology. The package can be driven at high
current due to its superior package design. The product
is able to dissipate the heat more efficiently compared to
the Power PLCC-4 SMT LEDs. These LEDs produce higher
light output with better flux performance compared to
the Power PLCC-4 SMT LED.
The Super 0.5W Cool White Power PLCC-4 SMT LEDs are
designed for higher reliability, better performance, and
operate under a wide range of environmental conditions.
The performance characteristics of these new mid-power
LEDs make them uniquely suitable for use in harsh condi-
tions such as in automotive applications, and in electron-
ics signs and signals.
To facilitate easy pick and place assembly, the LEDs are
packed in EIA-compliant tape and reel. Every reel is
shipped in single intensity and sub color bin, to provide
close uniformity.
Features
•
Industry Standard PLCC 4 platform (3.2x2.8x1.9mm)
•
High reliability package with enhanced silicone resin
encapsulation
•
High brightness with optimum flux performance
using InGaN chip technologies
•
Available in Cool White
•
Available in 8mm carrier tape & 7 inch reel
•
Low Thermal Resistance 40°C/W
•
Super wide viewing angle at 120 degree
•
JEDEC MSL 2a
Applications
1. Interior automotive
a. Instrument panel backlighting
b. Central console backlighting
c. Navigation and audio system backlighting
d. Dome/Map lighting
e. Push button backlighting
f. Puddle lamp.
g. Glove compartment illumination
2. Exterior automotive
a. Number plate illumination
3. Electronic signs and signals
a. Decorative lighting
4. Office automation, home appliances, industrial
equipment
a. Panel/button backlighting
b. Display backlighting
CAUTION:
ASMT-QWBE-Nxxxx LEDs are ESD sensitive. Please observe appropriate precautions
during handling and processing. Refer to Avago Application Note AN-1142 for additional details.
Package Drawing
2.2 ± 0.2
A
A
1.9 ± 0.2
0.79 ± 0.3
2.8 ± 0.2
0.6 ± 0.3
1.15 ± 0.2
3.6 ± 0.2
3.2 ± 0.2
Ø
2.4
0.97
C
CATHODE
MARKING
C
Notes:
1. All dimensions in millimeters
2. Lead polarity as shown in figure 13.
3. Terminal finish: Ag plating.
4. Encapsulation material: silicone resin.
Figure 1. Package Drawing
Table 1. Device Selection Guide (T
J
= 25 °C)
Luminous Flux,
Φ
V[1]
(lm)
Color
Cool White
Part Number
ASMT-QWBE-NFH0E
Min. Flux (lm)
15.0
Typ. Flux (lm)
19.5
Max. Flux (lm)
33.0
0.56 (TYP .)
0.41 (TYP .)
Test Current (mA)
150
Dice Technology
InGaN
Notes:
1.
Φ
V
is the total luminous flux output as measured with an integrating sphere at mono pulse conditions.
2. Tolerance = ±12%
Part Numbering System
A S M T - Q X
1
B E – N X
2
X
3
X
4
X
5
Packaging Option
Colour Bin Selection
Max. Flux Bin Selection
Min. Flux Bin Selection
Color
W - Cool White
2
Table 2. Absolute Maximum Ratings (T
A
= 25 °C)
Parameters
DC Forward Current
[1]
Peak Forward Current
[2]
Power Dissipation
Reverse Voltage
Junction Temperature
Operating Temperature
Storage Temperature
Notes:
1. Derate Linearly as shown in Figure 6.
2. Duty Factor = 10%, Frequency = 1kHz
ASMT-QWBE-Nxxxx
150 mA
300 mA
513 mW
-4V
125 °C
-40 °C to +110 °C
-40 °C to +110 °C
Table 3. Optical Characteristics (T
J
= 25 °C)
Typical
Chromaticity
Coordinates
x
0.33
Color
Cool White
Part Number
ASMT-QWBE-Nxxxx
Dice
Technology
InGaN
Viewing
Angle 2θ
½[1]
(Degrees)
y
0.33
Luminous
Efficiency
η
e
(lm/W)
Typ.
40
Total Flux /
Luminous Intensity
Φ
V
(lm) / I
V
(cd)
Typ.
2.75
Typ.
120
Notes:
1. θ½ is the off-axis angle where the luminous intensity is ½ the peak intensity.
Table 4. Electrical Characteristics (T
J
= 25 °C)
Forward Voltage V
F
(Volts) @ I
F
= 150 mA
Part Number
ASMT-QWBE-NFH0E
Typ.
3.6
Max.
4.1
Thermal Resistance Rθ
J-P
(°C/W)
40
3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
350
300
FORWARD CURRENT - mA
380
430
480
530 580 630
WAVELENGTH - nm
680
730
780
250
200
150
100
50
2
3
FORWARD VOLTAGE - V
Figure 3. Forward Current Vs. Forward Voltage
0
0
1
4
5
RELATIVE INTENSITY
Figure 2. Relative Intensity Vs. Wavelength
1.2
RELATIVE LUMINOUS FLUX
(NORMALIZED AT 150 mA)
1.0
RELATIVE LUMINOUS FLUX
(NORMALIZED AT 25°C)
0
30
60
90
120
DC FORWARD CURRENT - mA
150
0.8
0.6
0.4
0.2
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
T
J
- JUNCTION TEMPERATURE - °C
75
100
Figure 4. Relative Flux Vs. Forward Current
Figure 5. Relative Flux Vs. Temperature
160
140
120
CURRENT - mA
100
80
60
40
20
0
0
20
40
60
80
TEMPERATURE (°C)
100
120
R
JA
= 90°C/W
CURRENT - mA
R
JA
= 110°C/W
160
140
120
100
80
60
40
20
0
0
20
40
60
80
TEMPERATURE (°C)
100
120
R
JP
= 40°C/W
Figure 6a. Maximum Forward Current Vs. Ambient Temperature.
DeratedBased on T
JMAX
= 125°C, Rθ
J-A
=110°C/W & 90°C/W
Figure 6b. Maximum Forward Current Vs. Solder Point Temperature.
Derated Based on T
JMAX
= 125°C, Rθ
J-P
=40°C/W.
4
0.40
0.30
CURRENT - A
0.20
0.10
0.00
0.00001 0.0001 0.001
D=
0.05
0.10
0.25
0.50
1
0.40
D=
0.30
CURRENT - A
0.20
0.10
T
10
I
F
100
0.00
0.00001 0.0001 0.001
0.01
0.1
t
p
- Time - (s)
0
t
p
T
t
p
T
I
F
D=
0.05
0.10
0.25
0.50
1
t
D=
p
T
0.01
0.1
t
p
- Time - (s)
0
t
p
10
100
Figure 7a. Maximum Pulse Current Vs. Ambient Temperature.
Derated Based on T
A
= 25°C, Rθ
J-A
=110°C/W.
Figure 7b. Maximum Pulse Current Vs. Ambient Temperature.
Derated Based on T
A
= 85°C, Rθ
J-P
=110°C/W.
0.010
FORWARD VOLTAGE SHIFT - V
50
100
150
200
FORWARD CURRENT - mA
250
300
0.005
COORDINATE SHIFT
0.000
Cy
-0.005
-0.010
-0.015
Cx
0.25
0.20
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-50
0
-25
0
25
50
T
J
- JUNCTION TEMPERATURE - °C
75
100
Figure 8. Chromaticity shift Vs. forward current
Figure 9. Forward Voltage Shift Vs. Temperature.
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
NORMALIZED INTENSITY
-90
-60
-30
0
30
60
ANGULAR DISPLACEMENT - DEGREES
90
Figure 10. Radiation Pattern
5
Microcontroller MCU
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