datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Analog mixed-signal IC> Trigger device> MCC72-16IO1B
PDF
Preview

MCC72-16IO1B

Description
Silicon Controlled Rectifier, 180A I(T)RMS, 85000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, TO-240AA, TO-240AA, 7 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size533KB，6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
Download Datasheet Parametric View All

MCC72-16IO1B Online Shopping

Suppliers Part Number Price MOQ In stock  
MCC72-16IO1B - - View Buy Now

MCC72-16IO1B Overview

Silicon Controlled Rectifier, 180A I(T)RMS, 85000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, TO-240AA, TO-240AA, 7 PIN

MCC72-16IO1B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instructionFLANGE MOUNT, R-XUFM-X7
Reach Compliance Codecompliant
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum DC gate trigger current150 mA
Maximum DC gate trigger voltage1.5 V
Quick connection description2G-2GR
Description of screw terminalsA-K-AK
Maximum holding current200 mA
JEDEC-95 codeTO-240AA
JESD-30 codeR-XUFM-X7
Maximum leakage current15 mA
On-state non-repetitive peak current1800 A
Number of components2
Number of terminals7
Maximum on-state current85000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current180 A
Off-state repetitive peak voltage1600 V
Repeated peak reverse voltage1600 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR

MCC72-16IO1B Preview

MCC72-16io1B
Thyristor Module
V
RRM
I
TAV
V
T
=
2x 1600 V
=
=
85 A
1.34 V
Phase leg
Part number
MCC72-16io1B
Backside: isolated
3
6
7
1
5
4
2
Features / Advantages:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
●
Direct Copper Bonded Al2O3-ceramic
Applications:
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Power converter
●
AC power control
●
Lighting and temperature control
Package:
TO-240AA
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Soldering pins for PCB mounting
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191111c
© 2019 IXYS all rights reserved
MCC72-16io1B
Thyristor
Symbol
V
RSM/DSM
V
RRM/DRM
I
R/D
V
T
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 125 °C
T
VJ
= 125 °C
min.
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
Ratings
typ.
max. Unit
1700
V
1600
200
5
1.34
1.74
1.34
1.82
85
133
0.85
3.2
0.20
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 125 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 125 °C
V
R
= 0 V
T
VJ
= 25°C
T
C
= 125 °C
119
10
5
0.5
T
VJ
= 125 °C; f = 50 Hz
repetitive, I
T
= 250 A
t
P
= 200 µs; di
G
/dt = 0.45 A/µs;
I
G
= 0.45 A; V =
⅔
V
DRM
non-repet., I
T
=
85 A
V =
⅔
V
DRM
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
V
D
= 6 V
V
D
=
⅔
V
DRM
t
p
=
10 µs
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= 25 °C
T
VJ
= 25 °C
185
333
1.70
1.84
1.45
1.56
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
W
kA
kA
kA
kA
V
R/D
= 1600 V
V
R/D
= 1600 V
I
T
= 150 A
I
T
= 300 A
I
T
= 150 A
I
T
= 300 A
I
TAV
I
T(RMS)
V
T0
r
T
R
thJC
R
thCH
P
tot
I
TSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 85 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.3 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
14.5 kA²s
14.0 kA²s
10.4 kA²s
10.1 kA²s
pF
W
W
W
C
J
P
GM
P
GAV
(di/dt)
cr
junction capacitance
max. gate power dissipation
V
R
= 400 V f = 1 MHz
t
P
= 30 µs
t
P
= 300 µs
average gate power dissipation
critical rate of rise of current
150 A/µs
500 A/µs
1000 V/µs
2.5
2.6
150
200
0.2
10
450
200
2
V
V
mA
mA
V
mA
mA
mA
µs
µs
(dv/dt)
cr
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
holding current
gate controlled delay time
V
D
= 6 V R
GK
=
∞
V
D
= ½ V
DRM
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
turn-off time
V
R
= 100 V; I
T
= 150A; V =
⅔
V
DRM
T
VJ
=100 °C
di/dt = 10 A/µs dv/dt =
20 V/µs t
p
= 200 µs
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191111c
© 2019 IXYS all rights reserved
MCC72-16io1B
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
TO-240AA
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
200
125
100
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
81
2.5
2.5
13.0
16.0
9.7
16.0
3600
3000
4
4
Ordering
Standard
Ordering Number
MCC72-16io1B
Marking on Product
MCC72-16io1B
Delivery Mode
Box
Quantity
36
Code No.
452718
Similar Part
MCMA85P1600TA
MCMA110P1600TA
Package
TO-240AA-1B
TO-240AA-1B
Voltage class
1600
1600
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Thyristor
* on die level
T
VJ
= 125°C
V
0 max
R
0 max
0.85
2
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191111c
© 2019 IXYS all rights reserved
MCC72-16io1B
Outlines TO-240AA
3
6
7
1
5
4
2
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191111c
© 2019 IXYS all rights reserved
MCC72-16io1B
Thyristor
2500
50 Hz, 80% V
RRM
2000
10
5
V
R
= 0 V
250
200
I
TSM
I
FSM
1500
DC
180° sin
120°
60°
30°
I
2
t
T
VJ
= 45°C
10
4
T
VJ
= 45°C
T
VJ
= 125°C
I
TAVM
[A]
150
[A]
1000
[A
2
s]
T
VJ
= 125°C
100
500
50
0
10
-3
10
3
10
-2
10
-1
10
0
10
1
1
2
3
6
8
10
0
0
50
100
150
t [s]
Fig. 1 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
250
t [ms]
Fig. 2 I
2
t versus time (1-10 ms)
T
C
[°C]
Fig. 3 Maximum forward current
at case temperature
10
R
thJA
[K/W]
0.4
200
0.6
0.8
1
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
150
1.2
1.5
V
G
1
2
1
3
5
4
6
P
T
100
2
DC
180° sin
120°
60°
30°
3
[V]
[W]
50
I
GD
, T
VJ
= 125°C
0
0
50
100
150
0
50
100
150
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
0.1
10
0
10
1
10
2
10
3
10
4
I
TAVM
, I
FAVM
[A]
T
A
[°C]
I
G
[mA]
Fig. 5 Gate trigger characteristics
1000
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode)
1200
R
thKA
1200
[K/W]
0.1
0.15
0.2
800
0.25
0.3
600
0.4
0.5
400
Circuit
B6
3x MCC72 or
3x MCD72
0.6
T
VJ
= 25°C
100
typ.
Limit
P
tot
[W]
t
gd
[µs]
10
200
0
0
100
200
300
0
50
100
150
1
10
100
1000
I
dAVM
[A]
T
A
[°C]
I
G
[mA]
Fig. 7 Gate trigger delay time
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191111c
© 2019 IXYS all rights reserved
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

Recommended Resources

Low drift peak detector

Children's Toy Doraemon Circuit

Application example of HL402 in DC chopper system

Toy walkie-talkie circuit

Walking electronic referee device

CNC triangular wave square wave oscillator circuit

[Perf-V Review] + Solidification of Hummingbird Soft Core
After building the Hummingbird project development environment, you can explore the use of the Hummingbird soft core. The first thing to do is to download the Hummingbird soft core on the Perf-V devel...
jinglixixi FPGA/CPLD
I would like to ask, will all DLLs under the WINCE registry [HKEY_LOCAL_MACHINE\Drivers\BuiltIn] be loaded by the device manager?
I am porting the SDIO driver SDHC_SC2440.dll, and its entries in the registry are as follows. However, I feel that its entry function DllEntry and initialization function SDH_Init are not executed. I ...
xieyongchr Embedded System
Beginner c51, xdata related issues.
I am a beginner in C51 and don't know much about the address allocation of xdata. For example, I defined the following variables: unsigned char xdata b1; unsigned char xdata b2; unsigned int xdata b3;...
wind518 Embedded System
Two days ago, a 48-year-old structural engineer resigned from the company
The company asked him to leave because he was not competent for his job. Alas, from his situation, we can see the future life of people who are still engaged in specific design work at the age of 35!...
eeleader Talking about work
7.7 After downloading, the file cannot be opened or decompressed
:)...
yinsan MCU
IR21XX + F28027 ---- A better synchronous power supply solution
I don't need to explain the circuit principle, I think everyone should know it. As shown in the figure:For the PWM input part, using F280XX is a better choice....
dontium Analogue and Mixed Signal
Shortcut:   E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components

  1. 1.5SMCJ5.0
  2. RN732ETTD5831C25
  3. 2963
  4. B8P-VH(LF)(SN)
  5. EW-12-08-S-D-450
  6. RC12MR20GBG
  7. TR0805D1693P
  8. SSW20A1071GL13
  9. AME8500CEFTCE42
  10. PJMBZ5V6-AU_BU_10001
  11. 1N5222B_AY_10001
  12. BR1504LA1

Popular Articles

  1. Is there a real opportunity for RPA in the manufacturing value chain?
  2. Toshiba launches the new M4G group MCU based on Arm® Cortex®-M4 in the TXZ+TM family of advanced series
  3. Germany wants digital product manufacturers to provide seven-year system update services and spare parts
  4. 28-Smart curtain design based on 51 single chip microcomputer
  5. STM8 routine collection (register version)
  6. BYD is engaged in "acupuncture", Lantu is developing "amber" and "mica", they all have a bright future
  7. CEVA Sensor Hub DSP Achieves ASIL B and ASIL D Automotive Safety Compliance Certification
  8. Pixelworks Semiconductor and MediaTek Enter into Collaboration Agreement
  9. Detailed wiring diagram of the tester
  10. Xinlai Materials: The company has sufficient product orders and good production capacity

Technical ResourceMore

  1. X-ray diffraction experimental technology training materials
  2. TMS320DM643 realizes single-channel video surveillance system
  3. 75N75 pdf
  4. Computer Level 2C
  5. LCD monitor disassembly analysis
  6. Development and design of OPC data server for PLC
  7. Konka P2972S (24c16) EPROM data
  8. Sony KV-27FS200 Color TV Repair Manual
  9. Test system static characteristics calibration
  10. MAX19998 Chinese data, pdf, 2300MHz to 4000M

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 581  55  792  1435  366  12  2  16  29  8 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号