ZXMN6A11GA datasheet, PDF - EEWORLD Datasheet

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ZXMN6A11GA: DescriptionSmall Signal Field-Effect Transistor, 3.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT223, 6 PIN; CategoryDiscrete semiconductor The transistor; File Size996KB，7 Pages; ManufacturerDiodes Incorporated

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ZXMN6A11GA Overview

Small Signal Field-Effect Transistor, 3.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT223, 6 PIN

ZXMN6A11GA Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
Parts packaging code	SOT-223
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	3.8 A
Maximum drain-source on-resistance	0.14 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

ZXMN6A11GA Preview

ZXMN6A11G

60V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

(BR)DSS

= 60V; R

DS(ON)

= 0.14

DESCRIPTION

= 3.8A

This new generation of TRENCH MOSFETs from Zetex utilises a unique structure

that combines the benefits of low on-resistance with fast switching speed. This

makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

•

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT223 package

SOT223

APPLICATIONS

•

DC - DC converters

•

Power management functions

•

Relay and solenoid driving

•

Motor control

ORDERING INFORMATION

DEVICE

ZXMN6A11GA

ZXMN6A11GC

REEL

SIZE

7”

13”

TAPE

WIDTH

12mm

QUANTITY

PER REEL

1000 units

4000 units

DEVICE MARKING

•

ZXMN

6A11

TOP VIEW

ISSUE 2 - JUNE 2004

ZXMN6A11G

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current V

=10V; T

=25°C

(b)

=10V; T

=70°C

(b)

=10V; T

=25°C

(a)

Pulsed Drain Current

(c)

Continuous Source Current (Body Diode)

(b)

Pulsed Source Current (Body Diode)

(c)

Power Dissipation at T

=25°C

(a)

Linear Derating Factor

Power Dissipation at T

=25°C

(b)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

DSS

LIMIT

3.8

3.0

2.7

2.0

3.9

-55 to +150

UNIT

stg

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

Junction to Ambient

(a)

Junction to Ambient

(b)

NOTES

(a)

(b)

(c)

For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

For a device surface mounted on FR4 PCB measured at t 5 secs.

Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10 s - pulse width limited by maximum junction temperature.

SYMBOL

θJA

VALUE

62.5

UNIT

°C/W

ISSUE 2 - JUNE 2004

ZXMN6A11G

CHARACTERISTICS

ISSUE 2 - JUNE 2004

ZXMN6A11G

ELECTRICAL CHARACTERISTICS

(at TA = 25°C unless otherwise stated)

PARAMETER

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State

Resistance

(1)

Forward Transconductance

(3)

DYNAMIC

(3)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING

(2) (3)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate Charge

d(on)

d(off)

1.95

3.5

8.2

4.6

3.0

=15V, V

=5V,

=2.5A

=15V,V

=10V,

=2.5A

(refer to test circuit)

=30V, I

=2.5A

=6.0 , V

=10V

(refer to test circuit)

iss

oss

rss

330

35.2

17.1

=40 V, V

=0V,

f=1MHz

(BR)DSS

DSS

GSS

GS(th)

DS(on)

4.9

1.0

0.140

0.250

100

=250 A, V

=0V

=60V, V

=0V

=±20V, V

=0V

I =250 A, V

= V

=10V, I

=4.4A

=4.5V, I

=3.8A

=15V,I

=2.5A

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

Reverse Recovery Time

(3)

Reverse Recovery Charge

(3)

5.7

1.25

0.86

0.85

21.5

20.5

0.95

=25°C, I

=2.8A,

=0V

=25°C, I

=2.5A,

di/dt= 100A/µs

NOTES

(1) Measured under pulsed conditions. Width≤300µs. Duty cycle

≤

2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ISSUE 2 - JUNE 2004

ZXMN6A11G

TYPICAL CHARACTERISTICS

ISSUE 2 - JUNE 2004

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