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IRFHM8334TRPBF

Description
POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size277KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRFHM8334TRPBF Overview

POWER, FET

IRFHM8334TRPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionSMALL OUTLINE, S-PDSO-F5
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)35 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)25 A
Maximum drain current (ID)13 A
Maximum drain-source on-resistance0.009 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-PDSO-F5
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)28 W
Maximum pulsed drain current (IDM)176 A
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRFHM8334TRPbF
V
DS
V
GS
max
30
± 20
9.0
13.5
7.1
25
V
V
m
HEXFET
®
Power MOSFET
Top View
D 5
D 6
4 G
3 S
2 S
1 S
R
DS(on) max
(@V
GS
= 10V)
(@V
GS
= 4.5V)
:
Q
g typ.
I
D
(@T
c(Bottom)
= 25°C)
nC
A
D 7
D 8
h
PQFN 3.3 X 3.3 mm
Applications
Control MOSFET for high frequency buck converters
Features
Low Thermal Resistance to PCB (< 4.5°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRFHM8334PBF
Package Type
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8334TRPBF
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
Units
V
gh
27
gh
25
h
43
176
2.7
28
0.021
-55 to + 150
13
A
f
W
W/°C
°C
Notes

through
†
are on page 8
1
www.irf.com
© 2013 International Rectifier
May 21, 2013
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