AUIRFR5505TR datasheet, PDF - EEWORLD Datasheet

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AUIRFR5505TR: Description18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA; CategoryDiscrete semiconductor The transistor; File Size1MB，13 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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AUIRFR5505TR Overview

18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA

AUIRFR5505TR Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	150 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (Abs) (ID)	18 A
Maximum drain current (ID)	18 A
Maximum drain-source on-resistance	0.11 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	57 W
Maximum pulsed drain current (IDM)	64 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN OVER NICKEL
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD - 96342

AUTOMOTIVE GRADE

Features

AUIRFR5505

AUIRFU5505

HEXFET

Power MOSFET

Advanced Planar Technology

Low On-Resistance

P-Channel

Dynamic dV/dT Rating

150°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

(BR)DSS

-55V

0.11Ω

-18A

DS(on)

max.

Description

Specifically designed for Automotive applications, this

Cellular design of HEXFET® Power MOSFETs utilizes

the latest processing techniques to achieve low on-

resistance per silicon area. This benefit combined with the

fast switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in Automotive and a wide variety of other

applications.

D-Pak

AUIRFR5505

I-Pak

AUIRFU5505

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect

device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still

air conditions. Ambient temperature (T

) is 25°C, unless otherwise specified.

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

dv/dt

STG

Continuous Drain Current, V

@ -10V

Continuous Drain Current, V

@ -10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy(Thermally limited)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Max.

-18

-11

-64

0.45

± 20

150

-9.6

5.7

-5.0

-55 to + 150

Units

W/°C

V/ns

°C

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

θJC

θJA

Junction-to-Case

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

Typ.

–––

Max.

2.2

110

Units

°C/W

HEXFET

is a registered trademark of International Rectifier.

*Qualification

standards can be found at http://www.irf.com/

www.irf.com

12/6/10

AUIRFR5505TR Related Products

	AUIRFR5505TR	AUIRFR5505TRL	AUIRFR5505TRR	AUIRFU5505
Description	18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
Is it lead-free?	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA	TO-252AA	TO-252AA	TO-251AA
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Contacts	3	3	3	3
Reach Compliance Code	compli	compli	compli	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY	AVALANCHE RATED, HIGH RELIABILITY	AVALANCHE RATED, HIGH RELIABILITY	AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	150 mJ	150 mJ	150 mJ	150 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V	55 V	55 V	55 V
Maximum drain current (Abs) (ID)	18 A	18 A	18 A	18 A
Maximum drain current (ID)	18 A	18 A	18 A	18 A
Maximum drain-source on-resistance	0.11 Ω	0.11 Ω	0.11 Ω	0.11 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-252AA	TO-252AA	TO-251AA
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3
JESD-609 code	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1
Number of components	1	1	1	1
Number of terminals	2	2	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260	260	260
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	57 W	57 W	57 W	57 W
Maximum pulsed drain current (IDM)	64 A	64 A	64 A	64 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	NO
Terminal surface	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL
Terminal form	GULL WING	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30	30	30
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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