PD - 96342
AUTOMOTIVE GRADE
Features
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AUIRFR5505
AUIRFU5505
HEXFET
®
Power MOSFET
D
Advanced Planar Technology
Low On-Resistance
P-Channel
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
(BR)DSS
-55V
0.11Ω
-18A
G
S
R
DS(on)
max.
I
D
D
D
Description
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
G
D
S
G
D
S
D-Pak
AUIRFR5505
G
D
I-Pak
AUIRFU5505
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy(Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Max.
-18
-11
-64
57
0.45
± 20
150
-9.6
5.7
-5.0
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Ã
d
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
e
300 (1.6mm from case )
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
2.2
50
110
Units
°C/W
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
12/6/10
AUIRFR/U5505
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
-55
–––
–––
-2.0
4.2
–––
–––
–––
–––
Typ.
–––
-0.049
–––
–––
–––
–––
–––
–––
–––
Max.
–––
–––
0.11
-4.0
–––
-25
-250
100
-100
Units
V
Ω
V
S
µA
nA
Conditions
V
GS
= 0V, I
D
= -250µA
V
GS
= -10V, I
D
= -9.6A
V
DS
= -25V, I
D
= -9.6A
V
DS
= -55V, V
GS
= 0V
V
GS
= -20V
V
GS
= 20V
V/°C Reference to 25°C, I
D
= -1mA
V
DS
= V
GS
, I
D
= -250µA
f
h
V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
28
20
16
4.5
7.5
650
270
120
32
7.1
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
nH
ns
nC
I
D
= -9.6A
V
DS
= -44V
V
GS
= -10V,See Fig 6 and 13
V
DD
= -28V
I
D
= -9.6A
R
G
= 2.6
Ω
R
D
= 2.8Ω, See Fig.10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz,see Fig.5
f
Ãf
D
G
S
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
51
110
Max.
-18
-64
-1.6
77
160
Units
A
showing the
integral reverse
Conditions
MOSFET symbol
D
Ã
G
V
ns
nC
p-n junction diode.
T
J
= 25°C, I
S
= -9.6A, V
GS
= 0V
T
J
= 25°C, I
F
= -9.6A
di/dt = 100A/µs
f
S
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 2.8mH
R
G
= 25Ω, I
AS
= -6.6A (See Figure 12)
I
SD
≤
-6.6A, di/dt
≤
-240A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact.
Uses IRF9Z24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
www.irf.com
AUIRFR/U5505
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
D PAK
I-PAK
MSL1
N/A
Class M3 (250V)
( per AEC-Q101-002)
Class H1B (800V)
(per AEC-Q101-001)
Class C5 (2000V)
(per AEC-Q101-005)
Yes
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device
Model
RoHS Compliant
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRFR/U5505
4
www.irf.com
AUIRFR/U5505
www.irf.com
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