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AUIRLR2905

Description
42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
CategoryDiscrete semiconductor    The transistor   
File Size249KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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AUIRLR2905 Overview

42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

AUIRLR2905 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-252AA
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)210 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)42 A
Maximum drain current (ID)42 A
Maximum drain-source on-resistance0.03 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)110 W
Maximum pulsed drain current (IDM)160 A
Certification statusNot Qualified
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
AUTOMOTIVE GRADE
AUIRLR2905
AUIRLU2905
HEXFET
®
Power MOSFET
D
Advanced Planar Technology
Logic-Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified
V
(BR)DSS
R
DS(on)
max.
I
D
D
S
55V
27m
42A
G
S
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
D-Pak
AUIRLRU2905
G
D
G
I-Pak
AUIRLU2905
S
D
G
S
Gate
Drain
Source
Base part number Package Type
AUIRLR2905
Dpak
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Quantity
75
2000
3000
3000
75
Complete Part Number
AUIRLR2905
AUIRLR2905TR
AUIRLR2905TRL
AUIRLR2905TRR
AUIRLU2905
AUIRLU2905
Ipak
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Max.
42
30
160
110
0.71
Units
A
W
W/°C
V
mJ
A
mJ
°C
™
Ù
h
d
± 16
210
200
25
11
-55 to + 175
300
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
™
Soldering Temperature, for 10 seconds (1.6mm from case )
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
1
www.irf.com
© 2012 International Rectifier
June 5, 2012 PD-97623A

AUIRLR2905 Related Products

AUIRLR2905 AUIRLR2905TR AUIRLR2905TRL AUIRLR2905TRR AUIRLU2905
Description 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA MOSFET N-CH 55V 42A DPAK
Is it Rohs certified? conform to conform to conform to conform to conform to
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Reach Compliance Code compli compli compliant compli unknow
Other features AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 210 mJ 210 mJ 210 mJ 210 mJ 210 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V 55 V 55 V 55 V
Maximum drain current (Abs) (ID) 42 A 42 A 42 A 42 A 42 A
Maximum drain current (ID) 42 A 42 A 42 A 42 A 42 A
Maximum drain-source on-resistance 0.03 Ω 0.03 Ω 0.03 Ω 0.03 Ω 0.03 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 110 W 110 W 110 W 110 W 110 W
Maximum pulsed drain current (IDM) 160 A 160 A 160 A 160 A 160 A
Guideline AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101
surface mount YES YES YES YES NO
Terminal form GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Is it lead-free? Lead free Lead free Lead free Lead free -
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) -
Parts packaging code TO-252AA TO-252AA TO-252AA TO-252AA -
Contacts 3 3 3 3 -
ECCN code EAR99 EAR99 EAR99 EAR99 -
Shell connection DRAIN DRAIN DRAIN DRAIN -
JEDEC-95 code TO-252AA TO-252AA TO-252AA TO-252AA -
JESD-609 code e3 e3 e3 e3 -
Humidity sensitivity level 1 1 1 1 -
Peak Reflow Temperature (Celsius) 260 260 260 260 -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified -
Terminal surface MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL -
Maximum time at peak reflow temperature 30 30 30 30 -
Base Number Matches - - 1 1 1
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