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AUIRLU2905

Description
MOSFET N-CH 55V 42A DPAK
CategoryDiscrete semiconductor    The transistor   
File Size249KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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AUIRLU2905 Overview

MOSFET N-CH 55V 42A DPAK

AUIRLU2905 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknow
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)210 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)42 A
Maximum drain current (ID)42 A
Maximum drain-source on-resistance0.03 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)110 W
Maximum pulsed drain current (IDM)160 A
GuidelineAEC-Q101
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
AUTOMOTIVE GRADE
AUIRLR2905
AUIRLU2905
HEXFET
®
Power MOSFET
D
Advanced Planar Technology
Logic-Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified
V
(BR)DSS
R
DS(on)
max.
I
D
D
S
55V
27m
42A
G
S
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
D-Pak
AUIRLRU2905
G
D
G
I-Pak
AUIRLU2905
S
D
G
S
Gate
Drain
Source
Base part number Package Type
AUIRLR2905
Dpak
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Quantity
75
2000
3000
3000
75
Complete Part Number
AUIRLR2905
AUIRLR2905TR
AUIRLR2905TRL
AUIRLR2905TRR
AUIRLU2905
AUIRLU2905
Ipak
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Max.
42
30
160
110
0.71
Units
A
W
W/°C
V
mJ
A
mJ
°C
™
Ù
h
d
± 16
210
200
25
11
-55 to + 175
300
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
™
Soldering Temperature, for 10 seconds (1.6mm from case )
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
1
www.irf.com
© 2012 International Rectifier
June 5, 2012 PD-97623A

AUIRLU2905 Related Products

AUIRLU2905 AUIRLR2905 AUIRLR2905TR AUIRLR2905TRL AUIRLR2905TRR
Description MOSFET N-CH 55V 42A DPAK 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Is it Rohs certified? conform to conform to conform to conform to conform to
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknow compli compli compliant compli
Other features AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 210 mJ 210 mJ 210 mJ 210 mJ 210 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V 55 V 55 V 55 V
Maximum drain current (Abs) (ID) 42 A 42 A 42 A 42 A 42 A
Maximum drain current (ID) 42 A 42 A 42 A 42 A 42 A
Maximum drain-source on-resistance 0.03 Ω 0.03 Ω 0.03 Ω 0.03 Ω 0.03 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1 1 1
Number of terminals 3 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 110 W 110 W 110 W 110 W 110 W
Maximum pulsed drain current (IDM) 160 A 160 A 160 A 160 A 160 A
Guideline AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101
surface mount NO YES YES YES YES
Terminal form THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 - - 1 1
Is it lead-free? - Lead free Lead free Lead free Lead free
Maker - International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code - TO-252AA TO-252AA TO-252AA TO-252AA
Contacts - 3 3 3 3
ECCN code - EAR99 EAR99 EAR99 EAR99
Shell connection - DRAIN DRAIN DRAIN DRAIN
JEDEC-95 code - TO-252AA TO-252AA TO-252AA TO-252AA
JESD-609 code - e3 e3 e3 e3
Humidity sensitivity level - 1 1 1 1
Peak Reflow Temperature (Celsius) - 260 260 260 260
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified
Terminal surface - MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL
Maximum time at peak reflow temperature - 30 30 30 30
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