PRELIMINARY
SPECIFICATION
Austin Semiconductor, Inc.
128K x 32 Radiation Tolerant EEPROM
AVAILABLE AS MILITARY SPECIFICATIONS
•
MIL-STD-883, para 1.2.1 compliant
• SPACE Level Process Flow
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
EEPROM
AS8ERLC128K32
(Top View)
68 Lead CQFP
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
10
60
11
59
12
58
13
57
14
56
15
55
16
54
17
53
18
52
19
51
20
50
21
49
22
48
23
47
24
46
25
45
26
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
Vcc
A11
A12
A13
*A15
*A14
A16
CS1\
OE\
CS2\
NC
WE2\
WE3\
WE4\
NC
NC
RDY
RES\
A0
A1
A2
A3
A4
A5
CS3\
GND
CS4\
WE1\
A6
A7
A8
A9
A10
Vcc
PIN ASSIGNMENT
FEATURES
•
Access time of 250ns , 300ns
• Operation with single
3.3V (+ .3V)
supply
• LOW Power Dissipation:
Active(Worst case):
300mW
(MAX), Max Speed Operation
Standby(Worst case):
7.2mW(MAX),
Battery Back-up Mode
• Automatic Byte Write: 15 ms (MAX)
• Automatic Page Write (128 bytes): 15 ms (MAX)
• Data protection circuit on power -on/off
• Low power CMOS MONOS cell Technology
• 10
4
Erase/Write cycles (in Page Mode)
• Software data protection
• TTL Compatible Inputs and Outputs
• Data Retention: 10 years
• Ready/Busy\ and Data Polling Signals
• Write protection by RES\ pin
• Radiation Tolerant: Proven total dose 40K to 100K RADS*
• Shielded Package for Best Radiation Immunity
• Operating Temperature Ranges:
Military: -55
o
C to +125
o
C
Industrial: -40
o
C to +85
o
C
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
*Pin #'s 31 and 32, A15 and A14 respectively, are reversed from the AS8E128K32. Correct
use of these address lines is required for operation of the SDP mode to work properly.
PIN NAME
A0 to A16
I/O0 to I/O31
OE\
CE\
WE\
V
CC
FUNCTION
Address Input
Data Input/Output
Output Enable
Chip Enable
Write Enable
Power Supply
OPTIONS
• Timing
150 ns
200 ns
250 ns
• Package
Ceramic Quad Flat pack w/ formed leads
Ceramic Quad Flat pack w/ tie bar
Shielded Ceramic Quad Flat pack
Shielded Ceramic Quad Flat pack
MARKINGS
-150
-200
-250
Q
QB
SQ
SQB
No. 703Q
No. 703QB
No. 703SF
No. 703SQB
Ground
V
SS
RDY/BUSY\ Ready Busy
RES\
Reset
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS8ERLC128K32 is a 4 Mega-
bit Radiation Tolerant EEPROM Module organized as 128K x 32 bit.
User configurable to 256K x16 or 512Kx 8. The module achieves high
speed access, low power consumption and high reliability by
employing advanced CMOS memory technology.
The military grade product is manufactured in compliance to
MIL-STD 883, making the AS8ERLC128K32 ideally suited for mili-
tary or space applications.
The module is offered as a 68 lead 0.880 inch square ceramic
quad flat pack. It has a max. height of 0.200 inch (non-shielded). This
package design is targeted for those applications which require low
profile SMT Packaging.
* contact factory for test reports. ASI does not guarantee or warrant
these performance levels, but references these third party reports.
AS8ERLC128K32
Rev. 1.5 06/05
FUNCTIONAL BLOCK DIAGRAM
For more products and information
please visit our web site at
www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
PRELIMINARY
SPECIFICATION
Austin Semiconductor, Inc.
TRUTH TABLE
MODE
Read
Standby
Write
Deselect
Wirte Inhibit
Data\ Polling
Program Reset
CE\
V
IL
V
IH
V
IL
V
IL
X
X
V
IL
X
OE\
V
IL
X
3
EEPROM
AS8ERLC128K32
WE\
V
IH
X
V
IL
V
IH
V
IH
X
V
IH
X
RES\
V
H
X
V
H
V
H
X
X
V
H
V
IL
2
RDY/BUSY\
High-Z
High-Z
1
I/O
Dout
High-Z
Din
High-Z
---
---
Dout (I/O7)
High-Z
V
IH
V
IH
X
V
IL
V
IL
X
High-Z to V
OL
High-Z
---
---
V
OL
High-Z
NOTES:
1. RDY/Busy\ output has only active LOW V
OL
and high impedance state. It can not go to HIGH (V
OH
) state.
2. V
CC
- 0.5V <
V
H
< V
CC
+0.5V
3. X : DON'T CARE
AS8ERLC128K32
Rev. 1.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
PRELIMINARY
SPECIFICATION
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss
Vcc ....................................................................-0.6V to +5.0V
Operating Temperature Range
(1)
..................-55°C to +125°C
Storage Temperature Range .........................-65°C to +150°C
Voltage on any Pin Relative to Vss..............-0.5V to +5.0V
(2)
Max Junction Temperature**.......................................+150°C
Thermal Resistance junction to case (θ
JC
):
Package Type Q...........................................11.3° C/W
Package Type P & PN..................................2.8° C/W
NOTES:
1) Including electrical characteristics and data retention.
2) V
IN
MIN = -1.0V for pulse width < 20ns.
EEPROM
AS8ERLC128K32
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
**Junction temperature depends upon package type, cycle time,
loading, ambient temperature and airflow, and humidity
(plastics).
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55
o
C<T
A
<125
o
C or -40
o
C to +85
o
C; Vcc = 3.3V +/-.3V)
PARAMETER
Input High Voltage
Input High Voltage (RES\)
Input Low Voltage
LOW INPUT Leakage(RES\ Signal)
HIGH INPUT Leakage(RES\ Signal)
INPUT LEAKAGE CURRENT
2
CONDITIONS
SYMBOL
V
IH
V
H
V
IL
MIN
2.2
V
CC
-0.5
1
-0.3
-500
MAX
V
CC
+0.3
V
CC
+.5
0.8
10
UNITS
V
V
V
RES\=0V, VCC=3.6V
RES\=3.6V, VCC=3.6V
OV < V
IN
< V
CC
Outputs(s) Disabled,
OV < V
OUT
< V
CC
I
OH
= -0.4mA
I
OH
= -0.1mA
I
OL
= 2.1mA
I
OL
= 0.1mA
I
LI
(RES)
I
HI
(RES)
I
LI
I
LO
V
OH
V
OH
V
OL
V
OL
V
CC
-10
-10
VCCx.8
VCC-.0.3
--
--
3
10
10
--
--
0.4
0.2
3.6
V
V
V
V
V
OUTPUT LEAKAGE CURRENT
2
Output High Voltage
Output High Voltage
Output Low Voltage
Output Low Voltage
Supply Voltage
NOTE:
1) V
IL
(MIN): -1.0V for pulse width < 20ns.
2) All other Signal pins except RES\
PARAMETER
CONDITIONS
Iout = 0mA, V
CC
= 3.6V
Cycle = 1µS, Duty = 100%
SYM
MAX
-250
30
MAX
-300
30
UNITS
Power Supply Current:
Operating
I
cc3
Iout = 0mA, V
CC
= 3.6V
Cycle = MIN, Duty = 100%
CE\ = V
CC,
V
CC
= 3.6V
I
CC1
I
CC2
80
70
mA
0.2
0.2
mA
Power Supply Current:
Standby
CE\ = V
IH,
V
CC
= 3.6V
4
4
mA
AS8ERLC128K32
Rev. 1.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
PRELIMINARY
SPECIFICATION
Austin Semiconductor, Inc.
SYMBOL
C
ADD
C
OE
C
WE,
C
CE
C
IO
PARAMETER
A0 - A16 Capacitance
OE\, RES\, RDY Capacitance
WE\ and CE\ Capacitance
I/O 0- I/O 31 Capacitance
MAX
40
40
12
20
EEPROM
AS8ERLC128K32
CAPACITANCE TABLE
1
(V
IN
= 0V, f = 1 MHz, T
A
= 25
o
C, VCC=3.3V)
UNITS
pF
pF
pF
pF
NOTE:
1. This parameter is guaranteed but not tested.
AC TEST CHARACTERISTICS
TEST SPECIFICATIONS
Input pulse levels...........................................V
SS
to 3V
Input rise and fall times...........................................5ns
Input timing reference levels.................................1.5V
Output reference levels.........................................1.5V
Output load................................................See Figure 1
NOTES:
Vz is programmable from -2V to + 5V.
I
OL
and I
OH
programmable from 0 to 16 mA.
Vz is typically the midpoint of V
OH
and V
OL
.
I
OL
and I
OH
are adjusted to simulate a typical resistive load
circuit.
Current Source
I
OL
Device
Under
Test
-
+
+
Vz = 1.5V
(Bipolar
Supply)
Ceff = 50pf
Current Source
I
OH
Figure 1
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55
o
C < T
A
< +125
o
C or -40
o
C to +85
o
C; Vcc = 3.3V +.3V)
DESCRIPTION
Address to Output Delay
CE\ to Output Delay
OE\ to Output Delay
Address to Output Hold
CE\ or OE\ high to Output Float (1)
RES\ low to Output Float (1)
RES\ to Output Delay
AS8ERLC128K32
Rev. 1.5 06/05
TEST CONDITIONS
CE\ = OE\ = V
IL
, WE\ = V
IH
OE\ = V
IL
, WE\ = V
IH
OE\ = V
IL
, WE\ = V
IH
CE\ = OE\ = V
IL
, WE\ = V
IH
OE\ = V
IL
, WE\ = V
IH
CE\ = OE\ = V
IL
, WE\ = V
IH
CE\ = OE\ = V
IL
, WE\ = V
IH
4
-250
SYMBOL MIN MAX
t
ACC
250
t
CE
t
OE
t
OH
t
DF
t
DFR
t
RR
10
0
0
0
0
50
350
600
250
120
-300
MIN MAX UNITS
300
ns
300
10
0
0
0
0
50
350
600
130
ns
ns
ns
ns
ns
ns
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
PRELIMINARY
SPECIFICATION
Austin Semiconductor, Inc.
EEPROM
AS8ERLC128K32
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC WRITE CHARACTERISTICS
(-55
o
C < T
A
< +125
o
C; Vcc = 3.3V +.3V)
SYMBOL
t
AS
t
AH
t
CS
t
CH
t
WS
t
WH
t
OES
t
OEH
t
DS
t
DH
t
WP
t
CW
t
DL
t
BLC
t
BL
t
WC
t
DB
t
DW
t
RP
t
RES
Address Setup Time
Address Hold Time
CE\ to Write Setup Time (WE\ controlled)
CE\ Hold Time (WE\ controlled)
WE\ to Write Setup Time (CE\ controlled)
WE\ to Hold Time (CE\ controlled)
OE\ to Write Setup Time
OE\ to Hold Time
Data Setup Time
Data Hold Time
WE\ Pulse Width (WE\ controlled)
CE\ Pulse Width (CE\ controlled)
Data Latch Time
Byte Load Cycle
Byte Load Window
Write Cycle Time
Time to Device Busy
Write Start Time
Reset Protect Time
Reset High Time
(5)
PARAMETER
MIN
(2)
0
150
0
0
0
0
0
0
100
10
250
250
750
1
100
MAX
UNITS
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
30
µs
µs
15
150
250
(4)
(3)
ms
ns
ns
µs
µs
100
2
READ TIMING WAVEFORM
ADDRESS
CE\
t
ACC
t
CE
t
OE
t
DF
t
OH
OE\
WE\
Data Out
V
IH
HIGH-Z
t
RR
DATA OUT VALID
t
DFR
RES\
AS8ERLC128K32
Rev. 1.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
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