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AS8ERLC128K32SQB-250/883C

Description
EEPROM, 128KX32, 250ns, Parallel, CMOS, CQFP68, CERAMIC, QFP-68
Categorystorage    storage   
File Size550KB,18 Pages
ManufacturerMicross
Websitehttps://www.micross.com
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AS8ERLC128K32SQB-250/883C Overview

EEPROM, 128KX32, 250ns, Parallel, CMOS, CQFP68, CERAMIC, QFP-68

AS8ERLC128K32SQB-250/883C Parametric

Parameter NameAttribute value
Parts packaging codeQFP
package instructionGQFF,
Contacts68
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time250 ns
JESD-30 codeS-CQFP-F68
JESD-609 codee4
length22.352 mm
memory density4194304 bit
Memory IC TypeEEPROM
memory width32
Number of functions1
Number of terminals68
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX32
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeGQFF
Package shapeSQUARE
Package formFLATPACK, GUARD RING
Parallel/SerialPARALLEL
Programming voltage3 V
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height5.969 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfacePALLADIUM GOLD
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationQUAD
width22.352 mm
Base Number Matches1
PRELIMINARY
SPECIFICATION
Austin Semiconductor, Inc.
128K x 32 Radiation Tolerant EEPROM
AVAILABLE AS MILITARY SPECIFICATIONS
MIL-STD-883, para 1.2.1 compliant
• SPACE Level Process Flow
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
EEPROM
AS8ERLC128K32
(Top View)
68 Lead CQFP
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
10
60
11
59
12
58
13
57
14
56
15
55
16
54
17
53
18
52
19
51
20
50
21
49
22
48
23
47
24
46
25
45
26
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
Vcc
A11
A12
A13
*A15
*A14
A16
CS1\
OE\
CS2\
NC
WE2\
WE3\
WE4\
NC
NC
RDY
RES\
A0
A1
A2
A3
A4
A5
CS3\
GND
CS4\
WE1\
A6
A7
A8
A9
A10
Vcc
PIN ASSIGNMENT
FEATURES
Access time of 250ns , 300ns
• Operation with single
3.3V (+ .3V)
supply
• LOW Power Dissipation:
Active(Worst case):
300mW
(MAX), Max Speed Operation
Standby(Worst case):
7.2mW(MAX),
Battery Back-up Mode
• Automatic Byte Write: 15 ms (MAX)
• Automatic Page Write (128 bytes): 15 ms (MAX)
• Data protection circuit on power -on/off
• Low power CMOS MONOS cell Technology
• 10
4
Erase/Write cycles (in Page Mode)
• Software data protection
• TTL Compatible Inputs and Outputs
• Data Retention: 10 years
• Ready/Busy\ and Data Polling Signals
• Write protection by RES\ pin
• Radiation Tolerant: Proven total dose 40K to 100K RADS*
• Shielded Package for Best Radiation Immunity
• Operating Temperature Ranges:
Military: -55
o
C to +125
o
C
Industrial: -40
o
C to +85
o
C
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
*Pin #'s 31 and 32, A15 and A14 respectively, are reversed from the AS8E128K32. Correct
use of these address lines is required for operation of the SDP mode to work properly.
PIN NAME
A0 to A16
I/O0 to I/O31
OE\
CE\
WE\
V
CC
FUNCTION
Address Input
Data Input/Output
Output Enable
Chip Enable
Write Enable
Power Supply
OPTIONS
• Timing
150 ns
200 ns
250 ns
• Package
Ceramic Quad Flat pack w/ formed leads
Ceramic Quad Flat pack w/ tie bar
Shielded Ceramic Quad Flat pack
Shielded Ceramic Quad Flat pack
MARKINGS
-150
-200
-250
Q
QB
SQ
SQB
No. 703Q
No. 703QB
No. 703SF
No. 703SQB
Ground
V
SS
RDY/BUSY\ Ready Busy
RES\
Reset
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS8ERLC128K32 is a 4 Mega-
bit Radiation Tolerant EEPROM Module organized as 128K x 32 bit.
User configurable to 256K x16 or 512Kx 8. The module achieves high
speed access, low power consumption and high reliability by
employing advanced CMOS memory technology.
The military grade product is manufactured in compliance to
MIL-STD 883, making the AS8ERLC128K32 ideally suited for mili-
tary or space applications.
The module is offered as a 68 lead 0.880 inch square ceramic
quad flat pack. It has a max. height of 0.200 inch (non-shielded). This
package design is targeted for those applications which require low
profile SMT Packaging.
* contact factory for test reports. ASI does not guarantee or warrant
these performance levels, but references these third party reports.
AS8ERLC128K32
Rev. 1.5 06/05
FUNCTIONAL BLOCK DIAGRAM
For more products and information
please visit our web site at
www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1

AS8ERLC128K32SQB-250/883C Related Products

AS8ERLC128K32SQB-250/883C AS8ERLC128K32QB-250/883C AS8ERLC128K32SQB-300/883C AS8ERLC128K32Q-250/883C AS8ERLC128K32Q-300/883C AS8ERLC128K32SQ-250/883C AS8ERLC128K32QB-300/883C AS8ERLC128K32SQ-300/883C
Description EEPROM, 128KX32, 250ns, Parallel, CMOS, CQFP68, CERAMIC, QFP-68 EEPROM, 128KX32, 250ns, Parallel, CMOS, CQFP68, CERAMIC, QFP-68 EEPROM, 128KX32, 300ns, Parallel, CMOS, CQFP68, CERAMIC, QFP-68 EEPROM, 128KX32, 250ns, Parallel, CMOS, CQFP68, CERAMIC, QFP-68 EEPROM, 128KX32, 300ns, Parallel, CMOS, CQFP68, CERAMIC, QFP-68 EEPROM, 128KX32, 250ns, Parallel, CMOS, CQFP68, CERAMIC, QFP-68 EEPROM, 128KX32, 300ns, Parallel, CMOS, CQFP68, CERAMIC, QFP-68 EEPROM, 128KX32, 300ns, Parallel, CMOS, CQFP68, CERAMIC, QFP-68
Parts packaging code QFP QFP QFP QFP QFP QFP QFP QFP
package instruction GQFF, GQFF, GQFF, QFP, QFP, CERAMIC, QFP-68 GQFF, CERAMIC, QFP-68
Contacts 68 68 68 68 68 68 68 68
Reach Compliance Code compliant unknown unknown compliant unknown compliant unknown compliant
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
Maximum access time 250 ns 250 ns 300 ns 250 ns 300 ns 250 ns 300 ns 300 ns
JESD-30 code S-CQFP-F68 S-CQFP-F68 S-CQFP-F68 S-CQFP-G68 S-CQFP-G68 S-CQFP-G68 S-CQFP-F68 S-CQFP-G68
JESD-609 code e4 e0 e4 e0 e0 e4 e0 e4
length 22.352 mm 22.352 mm 22.352 mm 22.352 mm 22.352 mm 22.352 mm 22.352 mm 22.352 mm
memory density 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
Memory IC Type EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM
memory width 32 32 32 32 32 32 32 32
Number of functions 1 1 1 1 1 1 1 1
Number of terminals 68 68 68 68 68 68 68 68
word count 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
character code 128000 128000 128000 128000 128000 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
organize 128KX32 128KX32 128KX32 128KX32 128KX32 128KX32 128KX32 128KX32
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
encapsulated code GQFF GQFF GQFF QFP QFP QFP GQFF QFP
Package shape SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
Package form FLATPACK, GUARD RING FLATPACK, GUARD RING FLATPACK, GUARD RING FLATPACK FLATPACK FLATPACK FLATPACK, GUARD RING FLATPACK
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Programming voltage 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Filter level MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883
Maximum seat height 5.969 mm 4.826 mm 5.969 mm 5.08 mm 5.08 mm 5.969 mm 4.826 mm 5.969 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
Terminal surface PALLADIUM GOLD TIN LEAD PALLADIUM GOLD TIN LEAD TIN LEAD PALLADIUM GOLD TIN LEAD PALLADIUM GOLD
Terminal form FLAT FLAT FLAT GULL WING GULL WING GULL WING FLAT GULL WING
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location QUAD QUAD QUAD QUAD QUAD QUAD QUAD QUAD
width 22.352 mm 22.352 mm 22.352 mm 22.352 mm 22.352 mm 22.352 mm 22.352 mm 22.352 mm
Maker - Micross - - Micross Micross Micross Micross
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