80-M006PNB006SA-K614C;80-M006PNB006SA01-K614D
preliminary datasheet
MiniSkiip 0
Features
●
Solderless interconnection
●
Trench Fieldstop IGBT's for low saturation losses
●
Optional 2- and 3-leg rectifier
600V/6A
Miniskiip0 housing
Target Applications
●
Industrial Drives
●
Embedded Drives
Schematic
Types
80-M006PNB006SA01-K614D, 2-leg rectifier
80-M006PNB006SA-K614C, 3-leg rectifier
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
t
p
=10ms
It
P
tot
T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
2
1600
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
25
25
220
T
j
=25°C
240
38
58
150
V
A
A
A
2
s
W
°C
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
V
CE
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
VCE
≤
1200V, Tj
≤
Top max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
10
10
18
18
31
48
±20
6
360
175
V
A
A
A
W
V
μs
V
°C
copyright Vincotech
1
Revision: 1
80-M006PNB006SA-K614C;80-M006PNB006SA01-K614D
preliminary datasheet
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
10
10
22
26
40
175
V
A
A
W
°C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
V
mm
mm
copyright Vincotech
2
Revision: 1
80-M006PNB006SA-K614C;80-M006PNB006SA01-K614D
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
V
F
V
to
r
t
I
r
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
25
25
25
1600
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,43
1,44
0,92
0,79
20,29
26,11
1,64
V
V
mΩ
0,05
mA
K/W
1,83
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
V
CE
=V
GE
15
0
20
600
0
0,00009
6
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
1,24
5,8
1,59
1,84
6,5
2,04
0,0004
300
V
V
mA
nA
Ω
Rgoff=64
Ω
Rgon=64
Ω
±15
300
6
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
105
102,4
21,8
27,8
142,2
163,6
102,7
132,4
0,15
0,22
0,15
0,19
368
ns
mWs
f=1MHz
0
25
Tj=25°C
28
11
pF
15
480
6
Tj=25°C
62
3,03
42
nC
K/W
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
6
Rgon=64
Ω
±15
300
6
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,42
1,36
3,92
5,82
182,7
288,1
0,32
0,77
45
57
0,06
0,16
3,64
V
A
ns
μC
A/μs
mWs
K/W
Thermistor
Rated resistance
Deviation of R
R100
Temperature coefficient
A-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
Tol. %
Tol. %
Tr=25°C
Tr=25°C
R
ΔR/R
R
100
R25=1000
Ω
R100=1670
Ω
Tr=25°C
Tr=25°C
Tr=100°C
Tr=25°C
-3
-2
1670
0,76
7,635*10-3
1,731*10-5
1000
3
2
Ω
%
Ω
% /K
1/K
1/K²
E
copyright Vincotech
3
Revision: 1
80-M006PNB006SA-K614C;80-M006PNB006SA01-K614D
preliminary datasheet
Output Inverter
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
20
I
C
(A)
Output inverter IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
20
I
C
(A)
Output inverter IGBT
16
16
12
12
8
8
4
4
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
t
p
=
T
j
=
V
GE
from
250
μs
25
°C
7 V to 17 V in steps of 1 V
t
p
=
T
j
=
V
GE
from
250
μs
150
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
6
I
C
(A)
Output inverter IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
20
I
F
(A)
Output inverter FWD
T
j
= 25°C
5
16
4
12
3
8
2
4
1
T
j
= T
jmax
-25°C
T
j
= T
jmax
-25°C
T
j
= 25°C
0
0
0
1
2
3
4
5
6
7
8
V
GE
(V)
9
10
0,0
0,5
1,0
1,5
2,0
V
F
(V)
2,5
t
p
=
V
CE
=
250
10
μs
V
t
p
=
250
μs
copyright Vincotech
4
Revision: 1
80-M006PNB006SA-K614C;80-M006PNB006SA01-K614D
preliminary datasheet
Output Inverter
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I
C
)
0,6
E (mWs)
Output inverter IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R
G
)
E (mWs)
0,6
Output inverter IGBT
0,5
0,5
E
on High T
E
on High T
0,4
0,4
E
on Low T
E
on Low T
0,3
0,3
E
off High T
0,2
E
off Low T
0,2
E
off High T
E
off Low T
0,1
0,1
0,0
0
3
6
9
I
C
(A)
12
0,0
0
64
128
192
256
R
G
(
Ω
)
320
inductive load
T
j
=
25/150
V
CE
=
300
V
GE
=
±15
R
gon
=
64
R
goff
=
64
°C
V
V
Ω
Ω
inductive load
T
j
=
25/150
V
CE
=
300
V
GE
=
±15
I
C
=
6
°C
V
V
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E
rec
= f(I
C
)
0,3
E (mWs)
Output inverter FWD
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E
rec
= f(R
G
)
0,25
E (mWs)
Output inverter FWD
E
rec
0,20
0,2
T
j
= T
jmax
-25°C
0,2
0,15
T
j
= T
jmax
-25°C
0,1
E
rec
0,10
E
rec
T
j
= 25°C
0,1
0,05
E
rec
T
j
= 25°C
0,0
0
3
6
9
I
C
(A)
12
0,00
0
64
128
192
256
R
G
(
Ω
)
320
inductive load
T
j
=
25/150
V
CE
=
300
V
GE
=
±15
R
gon
=
64
°C
V
V
Ω
inductive load
T
j
=
25/150
V
CE
=
300
V
GE
=
±15
I
C
=
6
°C
V
V
A
copyright Vincotech
5
Revision: 1
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