TM6607 datasheet, PDF - EEWORLD Datasheet

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TM6607: DescriptionRF AMPLIFIER MODEL; CategoryWireless rf/communication Radio frequency and microwave; File Size69KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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TM6607 Overview

RF AMPLIFIER MODEL

TM6607 Parametric

Parameter Name	Attribute value
Maker	API Technologies
package instruction	T4, TO-8, 4 PIN
Reach Compliance Code	compli
Other features	I/P POWER-MAX (PEAK)=27DBM
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	14 dB
Maximum input power (CW)	13 dBm
Maximum operating frequency	500 MHz
Minimum operating frequency	5 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2

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RF AMPLIFIER

MODEL

TM6607

Features

Medium Gain: 15 dB Typical

Medium Output Power: +14.5 dBm Typical

Operating Temp. - 55 ºC

to +85

ºC

Environmental Screening Available

Available as:

TM6607, 4 Pin TO-8 (T4)

TN6607, 4 Pin Surface Mount (SM3)

FP6607, 4 Pin Flatpack (FP4)

BX6607, Connectorized Housing (H1)

Typical Intermodulation Performance at 25 º C

Second Order Harmonic Intercept Point ...... +40 dBm (Typ.)

Second Order Two Tone Intercept Point ....... +34 dBm (Typ.)

Third Order Two Tone Intercept Point ........... +24 dBm (Typ.)

Specifications

CHARACTERISTIC

Frequency

Gain (dB)

Power @ 1 dB

Comp. (dBm)

Reverse

Isolation (dB)

Out

Noise figure (dB)

Power

Vdc

VSWR

TYPICAL

Ta= 25 ºC

5 - 500 MHz

+14.5

-19

<1.25:1

<5.0

+24

MIN/MAX

Ta = -55 ºC to +85 ºC

5 - 500 MHz

14.0 Min.

+12.5 Min.

-18 Max.

2.0:1 Max.

6.0 Max.

+24

54 Max.

Maximum Ratings

Ambient Operating Temperature .............. -55ºC to + 100 ºC

Storage Temperature ............................... -62ºC to + 125 ºC

Case Temperature ................................................. + 125 ºC

DC Voltage ......................................................... + 26 Volts

Continuous RF Input Power ................................. + 13 dBm

Short Term RF Input Power...... 50 Milliwatts (1 Minute Max.)

Maximum Peak Power ................... 0.5 Watt (3

µsec

Max.)

Note: Care should always be taken to effectively ground the case of each unit.

Typical Performance Data

Start 5 MHz

Stop 500 MHz

Gain (dB)

- 10

- 20

- 30

- 40

Reverse Isolation (dB)

Start 5 MHz

Stop 500 MHz

Start 5 MHz

Noise Figure (dB)

Stop 500 MHz

+17

+16

+15

+14

+13

1 dB Comp. (dBm)

2.0

1.5

1.0

Input VSWR

2.0

1.5

1.0

Output VSWR

Start 5 MHz

Stop 500 MHz

Start 5 MHz

Stop 500 MHz

Start 5 MHz

Stop 500 MHz

Legend

+ 25 ºC

+ 85 ºC - - - - - - -55 ºC

Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532

11/16/04

www.spectrummicrowave.com

Spectrum Microwave (Europe) · 2707 Black Lake Place · Philadelphia, Pa. 19154 · PH (215) 464-4000 · Fax (215) 464-4001

TM6607 Related Products

	TM6607	BX6607	FP6607	TN6607
Description	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL	RF AMPLIFIER MODEL
Maker	API Technologies	API Technologies	API Technologies	API Technologies
Reach Compliance Code	compli	compli	compli	compli
Other features	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM
structure	COMPONENT	COAXIAL	COMPONENT	COMPONENT
Gain	14 dB	14 dB	14 dB	14 dB
Maximum input power (CW)	13 dBm	13 dBm	13 dBm	13 dBm
Maximum operating frequency	500 MHz	500 MHz	500 MHz	500 MHz
Minimum operating frequency	5 MHz	5 MHz	5 MHz	5 MHz
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2	2	2	2
package instruction	T4, TO-8, 4 PIN	H1, TO-8	FP-4	-

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