LQ2864-200 datasheet, PDF - EEWORLD Datasheet

LQ2864-200: DescriptionEEPROM, 8KX8, 200ns, Parallel, NMOS, CQCC32; Categorystorage storage; File Size205KB，6 Pages; ManufacturerLSC/CSI; Websitehttps://lsicsi.com

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LQ2864-200 Overview

EEPROM, 8KX8, 200ns, Parallel, NMOS, CQCC32

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	LSC/CSI
package instruction	QCCN, LCC32,.45X.55
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	200 ns
Other features	AUTOMATIC WRITE
command user interface	NO
Data polling	YES
Durability	10000 Write/Erase Cycles
JESD-30 code	R-CQCC-N32
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QCCN
Encapsulate equivalent code	LCC32,.45X.55
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
ready/busy	YES
Maximum slew rate	0.11 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	NMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
Maximum write cycle time (tWC)	10 ms

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