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STA124

Description
PNP Silicon Transistor
File Size178KB,4 Pages
ManufacturerKODENSHI
Websitehttp://www.kodenshi.co.jp
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STA124 Overview

PNP Silicon Transistor

Semiconductor
STA124
PNP Silicon Transistor
Features
Suitable for low voltage
large current drivers
High DC current gain and
large current capability
Complementary pair with STC128
PIN Connection
E
B
C
B
E
C
TO-92
Ordering Information
Type NO.
STA124
Marking
STA124
Package Code
TO-92
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
-15
-12
-6.5
-1
500
150
-55~150
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transistor frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test Condition
I
C
=-50μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50μA, I
C
=0
V
CB
=-15V, I
E
=0
V
EB
=-6V, I
C
=0
V
CE
=-1V, I
C
=-100mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-5V, I
C
=-50mA
V
CB
=-10V, I
E
=0, f=1MHz
Min. Typ. Max.
-15
-12
-6.5
-
-
200
-
-
-
-
-
-
-
-
-
-0.2
260
5
-
-
-
-0.1
-0.1
450
-0.4
-
-
Unit
V
V
V
μA
μA
-
V
MHz
pF
KSD-T0A026-000
1

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