Thyristor Surge Suppressors (TSS)
P0080EB - P5000EB Series - TO-92
Description
P0080EB - P5000EB Series are designed to protect broadband
equipment such as modems, line card, CPE and DSL from
damaging over-voltage transients.
The series provides a surface mount solution that enables
equipment to comply with global regulatory standards.
@10/700μS , 4KV
Features and Benefits
u
u
u
u
Low voltage overshoot
Low on-state voltage
Does not degrade surge capability after multiple surge events
within limit
Fails short circuit when surged in excess of ratings
Low Capacitance
PIN1
PIN3
Pinout Designation
u
Applicable Global Standards
u
u
u
u
u
u
u
u
u
TIA-968-A / TIA-968-B
ITU K.20/21 Enhanced level
ITU K.20/21 Basic Level
GR 1089 Inter building
GR 1089 Inter building
IEC 6100-4-5
YD/T 1082
YD/T 993
YD/T 950
Schematic Symbol
Electrical Parameters
Parameter
I
S
I
DRM
I
H
I
T
V
S
V
DRM
V
T
C
0
Definition
Switching Current
- maximum current required to switch to
on state
Leakage Current
- maximum peak off-state current
measured at VDRM
Holding Current
- minimum current required to maintain on
state
On-state Current
- maximum rated continuous on-state
current
Switching Voltage
- maximum voltage prior to switching to
on stat
Peak Off-state Voltage
- maximum voltage that can be
applied while maintaining off state
On-state Voltage
- maximum voltage measured at rated
on-state current
Off-state Capacitance
- typical capacitance measured in
off state
+I
I
T
I
S
I
H
I
DRM
-V
V
T
V
DRM
V
S
+V
-I
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
1/5
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Thyristor Surge Suppressors (TSS)
P0080EB - P5000EB Series - TO-92
Electrical Characteristics
V
DRM
Part
Number
P0080EB
P0300EB
P0640EB
P0720EB
P0900EB
P1100EB
P1300EB
P1500EB
P1800EB
P2000EB
P2300EB
P2600EB
P3100EB
P3500EB
P4000EB
P4500EB
P5000EB
Marking
P0080EB
P0300EB
P0640EB
P0720EB
P0900EB
P1100EB
P1300EB
P1500EB
P1800EB
P2000EB
P2300EB
P2600EB
P3100EB
P3500EB
P4000EB
P4500EB
P5000EB
@I
DRM
=5μA
@10/700μS , 4KV
V
S
@100V/μS
V
T
@I
T
=2.2A
I
S
mA max
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
I
T
A max
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
I
H
mA min
50
50
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
C
0
@1MHz
V min
6
25
58
65
75
90
120
140
170
180
190
220
275
320
360
400
440
V max
25
40
77
88
98
130
160
180
220
220
260
300
350
400
460
540
600
V max
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
pF min
25
15
40
35
25
30
25
25
25
20
25
20
20
20
20
20
20
pF max
150
140
60
60
55
50
45
40
35
35
35
35
35
35
35
35
35
Notes:
- Absolute maximum ratings measured at T
A
= 25ºC (unless otherwise noted).
- Devices are bi-directional.
Surge Ratings
2/10μS
1
Series
2/10μS
A min
B
250
2
8/20μS
1
1.2/50μS
A min
250
2
10/160μS
1
10/160μS
A min
150
2
10/560μS
1
10/560μS
A min
100
2
10/1000μS
1
10/1000μS
A min
80
2
5/310μS
1
10/700μS
A min
100
2
I
TSM
50/60 Hz
A min
30
di/dt
Amps/µs max
500
Notes:
1. Current waveform in
µs
2. Voltage waveform in
µs
- Peak pulse current rating (I
PP
) is repetitive and guaranteed for the life of the product.
- I
PP
ratings applicable over temperature range of -40ºC to +85ºC
- The device must initially be in thermal equilibrium with -40°C < T
J
< +150°C
Thermal Considerations
Package
Symbol
T
J
TO-92
T
S
R
θJA
Storage Temperature Range
Thermal Resistance: Junction to Ambient
- 40 to +150
90
Parameter
Operating Junction Temperature Range
Value
- 40 to + 150
Unit
°C
°C
°C/W
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
2/5
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Thyristor Surge Suppressors (TSS)
P0080EB - P5000EB Series - TO-92
Characteristic Curves
Figure 1 - V-I Characteristics
Figure 2 - t
r
×
t
d
Pulse Waveform
@10/700μS , 4KV
+I
I
T
I
S
I
H
I
DRM
-V
V
T
V
DRM
V
S
+V
t
r
=rise time to peak value
t
d
=decay time to half value
I
pp
–
Peak Pulse Current - % I
pp
100
Peak
Value
Waveform=t
r
×t
d
50
Half Value
50
t
r
0
t
d
t
–
Time (μs)
-I
Figure 3 - Normalized V
S
Change Versus Junction
Temperature
Figure 4 - Normalized DC Holding Current Versus Case
Temperature
2.0
14
Percent of V
S
Change - %
12
10
8
6
4
2
9
-4
-6
-8
-40
-20 0
20
40
60
80
100
120
140
160
1.8
I
H
I
H
(T
C
=25℃)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40 -20
0
20
40
60
80
100
120
140
160
25℃
25℃
Ration of
Junction Temperature (T
J
) -
℃
Case Temperature (TC) -
℃
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
3/5
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Thyristor Surge Suppressors (TSS)
P0080EB - P5000EB Series - TO-92
Environmental Specifications
80% Rated VDRM (VAC Peak ) +125°C or +150°C,
High Temp Voltage
Blocking
Lead Material Copper Alloy High Temp Voltage
Blocking 504 or 1008 hrs. MIL-STD-750 (Method
1040) JEDEC, JESD22-A-101
-65°C to +150°C, 15 min. dwell, 10 up to 100 cycles.
Temp Cycling
MIL-STD-750
JESD22-A104
Biased Temp &
Humidity
High Temp Storage
Low Temp Storage
52 VDC (+85°C) 85%RH, 504 up to 1008 hrs.
JEDEC, JESD22-A-101
+150°C 1008 hrs.
MIL-STD-750 (Method 1031)
EIA/
(Method
1051)
EIA/JEDEC,
@10/700μS , 4KV
Physical Specifications
Lead Material
Terminal Finish
Body Material
Copper Alloy
100% Matte-Tin Plated
UL recognized epoxy meeting flammability
classification 94V-0
JEDEC, JESD22-A-101
-65°C, 1008 hrs.
0°C to +100°C, 5 min. dwell, 10 sec. transfer,
Thermal Shock
Thermal Shock 10 cycles.
1056) JEDEC, JESD22-A-106
MIL-STD-750 (Method
Autoclave (Pressure
Cooker Test)
Resistance to Solder
Heat
Moisture Sensitivity
Level
+121°C, 100%RH, 2atm, 24 up to 168 hrs.
EIA/Cooker Test)
+260°C, 30 secs.
JEDEC, JESD22-A-102
MIL-STD-750 (Method 2031
85%RH, +85°C, 168 hrs., 3 reflow cycles Level
(+260°C Peak).
JEDEC-J-STD-020, Level 1
Soldering Parameters
Reflow Condition
-Temperature Min (T
s(min)
)
Ramp-up
Critical Zone
T
L
to T
P
Lead–free assembly
+150°C
+200°C
60 -180 Seconds
3°C/Second Max
3°C/Second Max
+217°C
60 -150 Seconds
260 +0/-5°C
30 Seconds Max
6°C/Second Max
8 minutes Max
+260°C
T
P
Pre Heat
-Temperature Max (T
s(max)
)
-Time (min to max) (t
s
)
T
L
T
S(max)
Temperature
Ramp-down
Average ramp up rate ( Liquidus Temp T
L
)
to peak
T
S(max)
to T
L
- Ramp-up Rate
T
S(min)
Preheat
- Temperature (T
L
) (Liquidus)
25
Time to peak temperature
(t 25℃ to peak)
Reflow
Time
- Time (min to max) (t
s
)
Peak Temperature (T
P
)
Time within 5°C of actual peak Temperature
(t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
4/5
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Thyristor Surge Suppressors (TSS)
P0080EB - P5000EB Series - TO-92
Part Numbering
@10/700μS , 4KV
Part Marking
PXXXXE
B
Part Marking Code
(Refer to Electrical Characteristics Table)
Date code
Dimensions
TO-92
Dimensions
Min
A
B
D
E
G
H
J
0.176
0.500
0.095
0.150
0.135
0.088
0.176
0.088
0.013
0.013
0.145
0.096
0.186
0.096
0.019
0.017
0.060
0.105
Inches
Max
0.196
Millimeters
Min
4.47
12.70
2.41
3.81
3.43
2.23
4.47
2.23
0.33
0.33
3.68
2.44
4.73
2.44
0.48
0.43
1.52
2.67
Max
4.98
MT1/PIN1
MT2/PIN3
K
L
M
N
The TO-92 is designed to meet mechanical standards as set forth in
JEDEC publication number 95.
All leads are insulated from case.
Case is electrically
non-conductive. (Rated at 1600 V
(AC) RMS
for one minute from leads
to case over the operating temperature range.)
Mold
flash
shall not exceed 0.13 mm per side.
Packaging
Part Number
Pxxx0EB
Description
TO-92 Bulk Pack
Quantity
1000
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
5/5
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
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