BA221116 datasheet, PDF - EEWORLD Datasheet

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BA221116: DescriptionDIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode; CategoryDiscrete semiconductor diode; File Size116KB，5 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BA221116 Overview

DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode

BA221116 Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.05 V
JEDEC-95 code	DO-35
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak forward current	9 A
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Maximum output current	0.2 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.35 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	30 V
Maximum reverse current	0.2 µA
Maximum reverse recovery time	0.004 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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BA221116 Related Products

	BA221116	BA221133	BA221153	BA221113	BA221136	BA221143
Description	DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode	DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode	DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode	DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode	DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode	DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
package instruction	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.05 V	1.05 V	1.05 V	1.05 V	1.05 V	1.05 V
JEDEC-95 code	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Maximum non-repetitive peak forward current	9 A	9 A	9 A	9 A	9 A	9 A
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Maximum output current	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum power dissipation	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	30 V	30 V	30 V	30 V	30 V	30 V
Maximum reverse current	0.2 µA	0.2 µA	0.2 µA	0.2 µA	0.2 µA	0.2 µA
Maximum reverse recovery time	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maker	NXP	-	NXP	NXP	NXP	NXP

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