DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.05 V |
| JEDEC-95 code | DO-35 |
| JESD-30 code | O-LALF-W2 |
| Maximum non-repetitive peak forward current | 9 A |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 200 °C |
| Maximum output current | 0.2 A |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Maximum power dissipation | 0.35 W |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 30 V |
| Maximum reverse current | 0.2 µA |
| Maximum reverse recovery time | 0.004 µs |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| BA221113 | BA221133 | BA221153 | BA221116 | BA221136 | BA221143 | |
|---|---|---|---|---|---|---|
| Description | DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode | DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode | DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode | DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode | DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode | DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode |
| package instruction | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.05 V | 1.05 V | 1.05 V | 1.05 V | 1.05 V | 1.05 V |
| JEDEC-95 code | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 |
| JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Maximum non-repetitive peak forward current | 9 A | 9 A | 9 A | 9 A | 9 A | 9 A |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
| Maximum output current | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
| Package body material | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Maximum power dissipation | 0.35 W | 0.35 W | 0.35 W | 0.35 W | 0.35 W | 0.35 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| Maximum reverse current | 0.2 µA | 0.2 µA | 0.2 µA | 0.2 µA | 0.2 µA | 0.2 µA |
| Maximum reverse recovery time | 0.004 µs | 0.004 µs | 0.004 µs | 0.004 µs | 0.004 µs | 0.004 µs |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
| Maker | NXP | - | NXP | NXP | NXP | NXP |
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