Surface Mount 2-Electrode Gas Discharge Tube (GDT)
UN2E5-SMD Series
Description
Gas discharge Tubes (GDT) are classical components for
protecting the installations of the telecommunications. It is
essential that IT and telecommunications systems -with their
high-grade but sensitive electronic circuits - be protected by
arresters. They are thus fitted at the input of the power supply
system together with varistors and at the connection points to
telecommunication lines. They have become equally indispensable
for protecting base stations in mobile telephone systems as well as
extensive cable television (CATV) networks with their repeaters
and distribution systems.
These protective components are also indispensable in other
sectors, In AC power transmission systems, they are often used
with current-limiting varistors, In customer premises equipment
such as DSL modems, WLAN routers, TV sets and cable modems
In air-conditioning equipment, the integral black-box concept offers
graduated protection by combining arresters with varistors, PTC,
diodes and inductor.
Schematic Symbol
Agency Approvals
Features
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Non-Radioactive
RoHS compliant
Low insertion loss
Excellent response to fast rising transients
Ultra low capacitance
5KA surge capability tested with 8/20μs
pulse as defined by IEC 61000-4-5
Product Characteristics
Materials
Product Marking
Glow to Arc
Transition Current
Glow Voltage
Storage and
Operational
Temperature
Weight
Dull Tin-plated
Without
< 0.5 Amps
~60 Volts
-40 to +90°C
Applications
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Communication equipment
CATV equipment
Test equipment
Data lines
Power supplies
Telecom SLIC protection
Broadband equipment
ADSL equipment, including ADSL2+
XDSL equipment
Satellite and CATV equipment
Consumer electronics
~0.5g
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
1/4
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Surface Mount 2-Electrode Gas Discharge Tube (GDT)
UN2E5-SMD Series
Device Dimensions
(Unit: mm)
Recommended pad outline
Electrical Characteristics
Service Life
DC
Spark-over
Voltage
Maximum
Impulse
Spark-over
Voltage
Minimum
Insulation
Resistance
Maximum
Arc
Capacitance Voltage
Nominal
Max
Nominal
Impulse Alternating Impulse
Impulse
Life
Discharge Discharge Discharge
Current
Current
Current
@50Hz
@8/20μs @8/20μs
@10/1000μs
1 Sec
±5
times
1 time
300 times
10 times
5KA
5KA
5KA
5KA
5KA
5KA
5KA
5KA
5KA
10KA
10KA
10KA
10KA
10KA
10KA
10KA
10KA
10KA
5A
5A
5A
5A
5A
5A
5A
5A
5A
100A
100A
100A
100A
100A
100A
100A
100A
100A
Part Number
@100V/S
UN2E5-90LSMD
UN2E5-150LSMD
UN2E5-200LSMD
UN2E5-230LSMD
UN2E5-300LSMD
UN2E5-350LSMD
UN2E5-400LSMD
UN2E5-470LSMD
UN2E5-600LSMD
Notes:
@100V/μs @1KV/μs
500V
500V
500V
600V
700V
700V
800V
900V
1100V
650V
650V
650V
700V
800V
800V
950V
1000V
1200V
1 GΩ
(at 50V DC)
@1MHz
1.0pF
1.0pF
1.0pF
1.0pF
1.0pF
1.0pF
1.0pF
1.0pF
1.0pF
@1A
~15V
~20V
~20V
~20V
~20V
~20V
~20V
~20V
~20V
90V±20%
150V±20%
200V±20%
230V±20%
300V±20%
350V±20%
400V±20%
470V±20%
600V±20%
1 GΩ
(at 50V DC)
1 GΩ
(at 100V DC)
1 GΩ
(at 100V DC)
1 GΩ
(at 100V DC)
1 GΩ
(at 100V DC)
1 GΩ
(at 100V DC)
1 GΩ
(at 100V DC)
1 GΩ
(at 100V DC)
1. Terms in accordance with ITU-T K.12 and GB/T 9043-2008
2. At delivery AQL 0.65 level
Ⅱ,
DIN ISO 2859
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
2/4
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Surface Mount 2-Electrode Gas Discharge Tube (GDT)
UN2E5-SMD Series
Electrical Rating
Item
DC Spark-over Voltage
Impulse Spark-over
Voltage
Insulation Resistance
Capacitance
Test Condition / Description
The voltage is measured with a slowly rate of rise dv / dt=100V/s
The maximum impulse spark-over voltage is measured with a rise time of
dv / dt=100V//μs or 1KV/μs
The resistance of gas tube shall be measured each terminal each other terminal,
please see above spec.
The capacitance of gas tube shall be measured each terminal to each other
terminal.
Test frequency :1MHz
The maximum current applying a waveform of 8/20μs that can be applied across
the terminals of the gas tube. One hour after the test is completed, re-testing of the
DC spark-over voltage does not exceed
±30%
of the nominal DC spark-over
voltage. Dwell time between pulses is 3 minutes.
To meet
the specified
value
Nominal Impulse
Discharge Current
Requirement
Nominal Alternating
Discharge Current
Rated RMS value of AC current at 50Hz, 1 sec. 10 times. Intervals: 3min. The DC
spark-over voltage does not exceed
±30%
of the nominal DC spark-over voltage.
8
IR > 10 ohms.
Recommended soldering profile
Reflow Condition
-Temperature Min (T
s(min)
)
T
P
Ramp-up
Critical Zone
T
L
to T
P
Pb - Free assembly
150°C
200°C
60 -180 Seconds
3°C/second max
5°C/second max
217°C
60 -150 Seconds
260 +0/-5°C
of
actual
peak
10 - 30 Seconds
6°C/second max
8 minutes Max
260°C
Pre Heat
-Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
T
L
T
S(max)
Temperature
Ramp-down
Average ramp up rate ( Liquidus Temp T
L
)
to peak
T
S(max)
to TL - Ramp-up Rate
Reflow
- Temperature (T
L
) (Liquidus)
- Time (min to max) (t
s
)
Peak Temperature (T
P
)
T
S(min)
Preheat
25
Time to peak temperature
(t 25℃ to peak)
Time
Time within 5°C
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
3/4
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Surface Mount 2-Electrode Gas Discharge Tube (GDT)
UN2E5-SMD Series
Part Numbering
UN2E5
–
XXX L SMD
SMD,
Surface Mount
L, 5KA
8/20μs Level
Nominal DC Spark-over Voltage
90 = 90V
350=350V
150 = 150V
400=400V
200 = 200V
470=470V
230 = 350V
600=600V
Series
Tape and Reel Dimensions
Unit: mm
Packaging
Part Number
UN2E5-XXXLSMD
Packaging Option
Tape & Reel -12mm tape/13″Reel
Quantity
1000
Cautions and warnings
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Gas discharge tubes (GDT) must not be operated directly in power supply networks.
Gas discharge tubes (GDT) may become hot in case of longer periods of current stress (danger of burning).
Gas discharge tubes (GDT) may be used only within their specified values. In the event of overload, the head contacts may
fail or the component may be destroyed.
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Damaged Gas discharge tubes (GDT) must not be re-used.
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
4/4
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
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