FQT13N06
N-Channel
MOSFET
March 2013
FQT13N06
60
V,
2.8
A,
140
mΩ
Description
This N-Channel enhancement mode power MOSFET
is produced using Fairchild Semiconductor
®
’s
proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially
tailored to reduce on-state resistance, and to provide
superior switching performance and high avalanche
energy strength. These devices are suitable for
switched mode power supplies, audio amplifier, DC
motor control, and variable switching power
applications.
N-Channel
QFET
®
MOSFET
Features
•
2.8
A, 60 V, R
DS(on)
=140 mΩ(Max.) @V
GS
=10 V, I
D
=1.4 A
• Low
Gate Charge
(Typ.
5.8
nC)
• Low Crss (Typ.
15
pF)
• 100%
Avalanche Tested
D
!
D
"
S
G
G
!
! "
"
"
SOT-223
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 70°C)
Drain Current
- Pulsed
(Note 1)
FQT13N06
60
2.8
2.24
11.2
±
25
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
85
2.8
0.21
7.0
2.1
0.017
-55 to +150
300
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJA
Parameter
Thermal Resistance, Junction-to-Ambient *
Typ
--
Max
60
Unit
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2002 Fairchild Semiconductor Corporation
FQT13N06 Rev. C0
www.fairchildsemi.com
FQT13N06
N-Channel
MOSFET
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to
25°C
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 48 V, T
C
= 150°C
V
GS
= 25 V, V
DS
= 0 V
V
GS
= -25 V, V
DS
= 0 V
60
--
--
--
--
--
--
0.06
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 1.4 A
V
DS
= 25 V, I
D
= 1.4 A
(Note 4)
2.0
--
--
--
0.11
3.0
4.0
0.14
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
240
90
15
310
120
20
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 48 V, I
D
= 13 A,
V
GS
= 10 V
(Note 4, 5)
V
DD
= 30 V, I
D
= 6.5 A,
R
G
= 25
Ω
(Note 4, 5)
--
--
--
--
--
--
--
5
25
8
15
5.8
2.0
2.5
20
60
25
40
7.5
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 2.8 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 13 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
39
40
2.8
11.2
1.5
--
--
A
A
V
ns
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 12.6mH, I
AS
= 2.8A, V
DD
= 25V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
13A, di/dt
≤
300A/us, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
FQT13N06 Rev. C0
www.fairchildsemi.com
FQT13N06
N-Channel
MOSFET
Typical Characteristics
10
1
Top :
I
D
, Drain Current [A]
10
0
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10
1
10
0
150℃
25℃
-55℃
※
Notes :
1. V
DS
= 25V
2. 250μ s Pulse Test
10
-1
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25℃
10
-1
10
0
10
1
10
-1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
500
10
1
R
DS(ON)
[m
Ω
],
Drain-Source On-Resistance
400
V
GS
= 10V
300
V
GS
= 20V
200
I
DR
, Reverse Drain Current [A]
100
※
Note : T
J
= 25℃
150℃
25℃
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
0
0
10
20
30
40
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
600
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
500
10
V
DS
= 30V
V
DS
= 48V
400
C
iss
C
oss
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
V
GS
, Gate-Source Voltage [V]
8
Capacitance [pF]
300
6
200
4
C
rss
100
2
※
Note : I
D
= 13 A
0
-1
10
0
10
0
10
1
0
1
2
3
4
5
6
7
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
FQT13N06 Rev. C0
www.fairchildsemi.com
FQT13N06
N-Channel
MOSFET
Typical Characteristics
(Continued)
1.2
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
2.0
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
1.5
1.0
1.0
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
0.5
※
Notes :
1. V
GS
= 10 V
2. I
D
= 1.4 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
Operation in This Area
is Limited by R
DS(on)
2.5
10
1
10 ms
10
0
100 ms
DC
I
D
, Drain Current [A]
2
I
D
, Drain Current [A]
100
µ
s
1 ms
2.0
1.5
1.0
10
-1
※
Notes :
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
0.5
10
-2
10
-1
10
0
10
1
10
0.0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
2
(t), T h e rm a l R e s p o n s e
D = 0 .5
0 .2
0 .1
0 .0 5
0 .0 2
10
0
10
1
※
N o te s :
1 . Z
θ
J C
( t ) = 6 0
℃
/ W M a x .
2 . D u t y F a c to r , D = t
1
/ t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
( t )
0 .0 1
s in g le p u ls e
P
DM
t
1
t
2
Z
θ
JC
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
FQT13N06 Rev. C0
www.fairchildsemi.com
FQT13N06
N-Channel
MOSFET
Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
Q
g
10V
Q
gs
Q
gd
V
GS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
V
DS
V
GS
R
G
R
L
V
DD
V
DS
90%
10V
DUT
V
GS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Unclamped Inductive Switching Test Circuit & Waveform
L
V
DS
I
D
R
G
DUT
t
p
BV
DSS
1
E
AS
= ---- L I
AS2
--------------------
2
BV
DSS
- V
DD
BV
DSS
I
AS
V
DD
V
DD
t
p
I
D
(t)
V
DS
(t)
Time
10V
©2002 Fairchild Semiconductor Corporation
FQT13N06 Rev. C0
www.fairchildsemi.com
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