DPE512S8N-25B datasheet, PDF - EEWORLD Datasheet

DPE512S8N-25B: DescriptionEEPROM Module, 512KX8, 250ns, Parallel, CMOS, CDMA32, SIDE BRAZED, CERAMIC, DIP-32; Categorystorage storage; File Size136KB，6 Pages; ManufacturerB&B Electronics Manufacturing Company

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DPE512S8N-25B Overview

EEPROM Module, 512KX8, 250ns, Parallel, CMOS, CDMA32, SIDE BRAZED, CERAMIC, DIP-32

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	B&B Electronics Manufacturing Company
Parts packaging code	MODULE
package instruction	DIP, DIP32,.6
Contacts	32
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	250 ns
Other features	DATA RETENTION > 10 YEARS
Data polling	YES
Data retention time - minimum	10
JESD-30 code	R-CDMA-T32
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	EEPROM MODULE
memory width	8
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
page size	128 words
Parallel/Serial	PARALLEL
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B
Maximum standby current	0.003 A
Maximum slew rate	0.09 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
switch bit	NO
Maximum write cycle time (tWC)	10 ms
write protect	SOFTWARE

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