ASMT-Mx00
Moonstone
TM
1 W Power LED Light Source
Data Sheet
Description
The Moonstone
TM
1W Power LED Light Source is a high
performance energy efficient device which can handle
high thermal and high driving current. The exposed pad
design has excellent heat transfer from the package to
the motherboard.
The Cool White Power LED is available in various color
temperature ranging from 4000K to 10000K and Warm
White Power LED ranging from 2600K to 4000K.
The low profile package design is suitable for a wide
variety of applications especially where height is a
constraint.
The package is compatible with reflow soldering
process. This will give more freedom and flexibility to
the light source designer.
Features
Available in Red, Amber, Green, Blue, Cool White and
Warm White color
Energy efficient
Exposed pad for excellent heat transfer
Suitable for reflow soldering process
High current operation
Long operation life
Wide viewing angle
Silicone encapsulation
ESD Class HBM Class 3B (threshold > 8 kV)
MSL 2A for InGaN products
MSL 4 for AlInGaP products
Specifications
AllnGaP technology for Red and Amber
2.1V (typ) at 350mA for AllnGaP
InGaN technology for Green, Blue, Cool White and
Warm White
3.2V (typ) at 350mA for InGaN
Applications
Portable (flash light, bicycle head light)
Reading light
Architectural lighting
Garden lighting
Decorative lighting
Package Dimensions
10.00
1
Anode
2 Cathode
3
Heat Sink
3.30
8.50
Metal Slug
3
Ø 5.26
10.60
8.50
Ø 8.00
1.27
LED
+
−
ZENER
2.00
1.30
1
5.08
2
0.81
5.25
Notes:
1. All dimensions are in millimeters.
2. Tolerance is ±0.1 mm unless otherwise specified.
3. Metal slug is connected to anode for electrically non-isolated option.
Device Selection Guide ( T
j
= 25°C)
Luminous Flux,
V[1,2]
(lm)
Part Number
ASMT-MR00-AGH00
ASMT-MR00-AHJ00
ASMT-MA00-AGH00
ASMT-MG00
ASMT-MB00
ASMT-MW00
ASMT-MY00
ASMT-MWB1
ASMT-MYB1
Amber
Green
Blue
Cool White
Warm White
Cool White Diffused
Warm White Diffused
Color
Red
Min.
25.5
33.0
25.5
43.0
11.5
43.0
43.0
43.0
43.0
Typ.
35.0
40.0
35.0
60.0
15.0
60.0
50.0
55.0
46.0
Max.
43.0
56.0
43.0
73.0
25.5
73.0
73.0
73.0
73.0
Test Current
(mA)
350
350
350
350
350
350
350
350
350
Dice
Technology
AlInGaP
AlInGaP
AlInGaP
InGaN
InGaN
InGaN
InGaN
InGaN
InGaN
Notes
1.
V
is the total luminous flux output as measured with an integrating sphere at 25 ms mono pulse condition.
2. Flux tolerance is ± 10%.
2
Part Numbering System
ASMT-M x xx – x x
1
x
2
x
3
x
4
Packaging Option
Color Bin Selection
Maximum Flux Bin Selection
Minimum Flux Bin Selection
Dice Type
N – InGaN
A – AllnGaP
Silicone Type
00 – Non-diffused
B1 – Diffused
Color
R – Red
A – Amber
G - Green
B - Blue
W - Cool White
Y - Warm White
Note:
1. Please refer to Page 8 for selection details.
Absolute Maximum Ratings (T
A
= 25°C)
Parameter
DC Forward Current
[1]
Peak Pulsing Current
[2]
Power Dissipation for AllnGaP
Power Dissipation for InGaN
LED Junction Temperature for AllnGaP
LED Junction Temperature for InGaN
Operating Ambient Temperature Range
Storage Temperature Range
Reverse Volttage
[3]
ASMT-Mx00/ ASMT-MxB1
350
1000
805
1225
125
110
-40 to +100
-40 to +120
Not recommended
Units
mA
mA
mW
mW
°C
°C
°C
°C
Notes:
1. DC forward current – derate linearly based on Figure 5 for AlInGaP & Figure 11 for InGaN.
2. Pulse condition duty factor = 10%, Frequency = 1kHz.
3. Not recommended for reverse bias operation.
3
Optical Characteristics at 350 mA (TJ = 25°C)
Peak Wavelength,
λ
PEAK
(nm)
Part Number
ASMT-MR00-AGH00
ASMT-MR00-AHJ00
ASMT-MA00-AGH00
ASMT-MG00
ASMT-MB00
Dominant Wave-
length, λ
D [1]
(nm)
Typ
625
625
590
525
460
Viewing Angle,
2θ½
[2]
(°)
Typ
120
120
120
120
120
Luminous Efficiency
(lm/W)
Typ
48
54
48
54
13
Color
Red
Red
Amber
Green
Blue
Typ
635
635
598
519
454
Correlated Color
Temperature, CCT (Kelvin)
Part Number
ASMT-MW00
ASMT-MY00
ASMT-MWB1
ASMT-MYB1
Viewing Angle,
2θ½ [2] (°)
Typ
110
110
110
110
Luminous Efficiency
(lm/W)
Typ
54
45
49
41
Color
Cool White
Warm White
Cool White Diffused
Warm White Diffused
Min.
4000
2600
4000
2600
Max.
10000
4000
10000
4000
Electrical Characteristic at 350 mA (T
J
= 25°C)
Forward Voltage V
F
(Volts) at I
F
= 350mA
Dice type
AllnGaP
InGaN
Thermal Resistance
Rθ j-ms ( °C/W)
[1]
Typ.
12
10
Min.
1.7
2.8
Typ.
2.1
3.2
Max.
2.3
3.5
Notes:
1. Rθ j-ms is Thermal Resistance from LED junction to metal slug.
4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
380
RED
AMBER
FORWARD CURRENT - mA
430
480
530
580
630
WAVELENGTH - nm
680
730
780
500
450
400
350
300
250
200
150
100
50
0
RELATIVE INTENSITY
0
0.5
1
1.5
2
FORWARD VOLTAGE - V
2.5
3
Figure 1. Relative Intensity vs. Wavelength for AlInGaP
Figure 2. Forward Current vs Forward Voltage for AlInGaP
1.4
RELATIVE LUMINOUS FLUX (- ) - lm
v
1.2
RELATIVE INTENSITY
0
50
100
150 200 250 300 350 400
MONO PULSE CURRENT - mA
450 500
1.0
0.8
0.6
0.4
0.2
0.0
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-90
-70
-50
-30
-10
10
30
OFF-AXIS ANGLE(°)
50
70
90
Figure 3. Relative Luminous Flux vs. Mono Pulse Current for AlInGaP
Figure 4. Radiation Pattern for AlInGaP
400
I
F
- MAX FORWARD CURRENT - mA
350
300
250
200
150
100
50
0
0
10
20
30
40
50
60
70
T
A
- AMBIENT TEMPERATURE - °C
80
90
R
JA
= 60°C/W
R
JA
= 50°C/W
R
JA
= 40°C/W
2
RELATIVE LOP (Normalized at 25°C)
RED
AMBER
1.5
1
0.5
0
-40 -25 -10
5
20 35 50 65 80
JUNCTION TEMPERATURE - °C
95 110 125
Figure 5. Maximum forward current vs. ambient temperature for AlInGaP
Derated based on T
J
MAX = 125°C, Rθ
JA
= 40°C/W / 50°C/W and 60°C/W
Figure 6. Relative LOP (Normalized at 25°C) vs. junction temperature for
AlInGaP
5
Embedded System
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