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Datasheet> All Categories > storage> storage> KM41C1001BP-10
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KM41C1001BP-10

Description
Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDIP18, PLASTIC, DIP-18
Categorystorage    storage   
File Size499KB，15 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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KM41C1001BP-10 Overview

Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDIP18, PLASTIC, DIP-18

KM41C1001BP-10 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeDIP
package instructionDIP, DIP18,.3
Contacts18
Reach Compliance Codeunknown
ECCN codeEAR99
access modeNIBBLE
Maximum access time100 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeSEPARATE
JESD-30 codeR-PDIP-T18
JESD-609 codee0
length22.02 mm
memory density1048576 bit
Memory IC TypeNIBBLE MODE DRAM
memory width1
Number of functions1
Number of ports1
Number of terminals18
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX1
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP18,.3
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle512
Maximum seat height4.65 mm
Maximum standby current0.001 A
Maximum slew rate0.065 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm

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KM41C1001BP-10 Related Products

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Description Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDIP18, PLASTIC, DIP-18 Nibble Mode DRAM, 1MX1, 100ns, CMOS, PZIP19, PLASTIC, ZIP-20/19 Nibble Mode DRAM, 1MX1, 80ns, CMOS, PZIP19, PLASTIC, ZIP-20/19 Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDSO20, PLASTIC, SOJ-26/20 Nibble Mode DRAM, 1MX1, 80ns, CMOS, PDSO20, PLASTIC, SOJ-26/20 Nibble Mode DRAM, 1MX1, 60ns, CMOS, PDSO20, PLASTIC, SOJ-26/20 Nibble Mode DRAM, 1MX1, 60ns, CMOS, PZIP19, PLASTIC, ZIP-20/19 Nibble Mode DRAM, 1MX1, 70ns, CMOS, PDSO20, PLASTIC, SOJ-26/20 Nibble Mode DRAM, 1MX1, 60ns, CMOS, PDIP18, PLASTIC, DIP-18 Nibble Mode DRAM, 1MX1, 70ns, CMOS, PDIP18, PLASTIC, DIP-18
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG
Parts packaging code DIP ZIP ZIP SOJ SOJ SOJ ZIP SOJ DIP DIP
package instruction DIP, DIP18,.3 ZIP, ZIP20,.1 ZIP, ZIP20,.1 SOJ, SOJ20/26,.34 SOJ, SOJ20/26,.34 SOJ, SOJ20/26,.34 ZIP, ZIP20,.1 SOJ, SOJ20/26,.34 DIP, DIP18,.3 DIP, DIP18,.3
Contacts 18 20 20 20 20 20 20 20 18 18
Reach Compliance Code unknown unknow unknow unknow unknow unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode NIBBLE NIBBLE NIBBLE NIBBLE NIBBLE NIBBLE NIBBLE NIBBLE NIBBLE NIBBLE
Maximum access time 100 ns 100 ns 80 ns 100 ns 80 ns 60 ns 60 ns 70 ns 60 ns 70 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE
JESD-30 code R-PDIP-T18 R-PZIP-T19 R-PZIP-T19 R-PDSO-J20 R-PDSO-J20 R-PDSO-J20 R-PZIP-T19 R-PDSO-J20 R-PDIP-T18 R-PDIP-T18
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
length 22.02 mm 26.165 mm 26.165 mm 17.145 mm 17.145 mm 17.145 mm 26.165 mm 17.145 mm 22.02 mm 22.02 mm
memory density 1048576 bit 1048576 bi 1048576 bi 1048576 bi 1048576 bi 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
Memory IC Type NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM
memory width 1 1 1 1 1 1 1 1 1 1
Number of functions 1 1 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1 1 1
Number of terminals 18 19 19 20 20 20 19 20 18 18
word count 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words
character code 1000000 1000000 1000000 1000000 1000000 1000000 1000000 1000000 1000000 1000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 1MX1 1MX1 1MX1 1MX1 1MX1 1MX1 1MX1 1MX1 1MX1 1MX1
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP ZIP ZIP SOJ SOJ SOJ ZIP SOJ DIP DIP
Encapsulate equivalent code DIP18,.3 ZIP20,.1 ZIP20,.1 SOJ20/26,.34 SOJ20/26,.34 SOJ20/26,.34 ZIP20,.1 SOJ20/26,.34 DIP18,.3 DIP18,.3
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE SMALL OUTLINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 512 512 512 512 512 512 512 512 512 512
Maximum seat height 4.65 mm 10.16 mm 10.16 mm 3.68 mm 3.68 mm 3.68 mm 10.16 mm 3.68 mm 4.65 mm 4.65 mm
Maximum standby current 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A
Maximum slew rate 0.065 mA 0.065 mA 0.075 mA 0.065 mA 0.075 mA 0.095 mA 0.095 mA 0.085 mA 0.095 mA 0.085 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO YES YES YES NO YES NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE J BEND J BEND J BEND THROUGH-HOLE J BEND THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 2.54 mm 2.54 mm
Terminal location DUAL ZIG-ZAG ZIG-ZAG DUAL DUAL DUAL ZIG-ZAG DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 7.62 mm 2.96 mm 2.96 mm 7.62 mm 7.62 mm 7.62 mm 2.96 mm 7.62 mm 7.62 mm 7.62 mm

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