KM41C1001BJ-10 datasheet, PDF - EEWORLD Datasheet

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KM41C1001BJ-10: DescriptionNibble Mode DRAM, 1MX1, 100ns, CMOS, PDSO20, PLASTIC, SOJ-26/20; Categorystorage storage; File Size499KB，15 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM41C1001BJ-10 Overview

Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDSO20, PLASTIC, SOJ-26/20

KM41C1001BJ-10 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	SOJ
package instruction	SOJ, SOJ20/26,.34
Contacts	20
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	NIBBLE
Maximum access time	100 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	SEPARATE
JESD-30 code	R-PDSO-J20
JESD-609 code	e0
length	17.145 mm
memory density	1048576 bi
Memory IC Type	NIBBLE MODE DRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	20
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX1
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ20/26,.34
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	512
Maximum seat height	3.68 mm
Maximum standby current	0.001 A
Maximum slew rate	0.065 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm
Base Number Matches	1

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Description	Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDSO20, PLASTIC, SOJ-26/20	Nibble Mode DRAM, 1MX1, 100ns, CMOS, PZIP19, PLASTIC, ZIP-20/19	Nibble Mode DRAM, 1MX1, 80ns, CMOS, PZIP19, PLASTIC, ZIP-20/19	Nibble Mode DRAM, 1MX1, 80ns, CMOS, PDSO20, PLASTIC, SOJ-26/20	Nibble Mode DRAM, 1MX1, 60ns, CMOS, PDSO20, PLASTIC, SOJ-26/20	Nibble Mode DRAM, 1MX1, 60ns, CMOS, PZIP19, PLASTIC, ZIP-20/19	Nibble Mode DRAM, 1MX1, 70ns, CMOS, PDSO20, PLASTIC, SOJ-26/20	Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDIP18, PLASTIC, DIP-18	Nibble Mode DRAM, 1MX1, 60ns, CMOS, PDIP18, PLASTIC, DIP-18	Nibble Mode DRAM, 1MX1, 70ns, CMOS, PDIP18, PLASTIC, DIP-18
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	SOJ	ZIP	ZIP	SOJ	SOJ	ZIP	SOJ	DIP	DIP	DIP
package instruction	SOJ, SOJ20/26,.34	ZIP, ZIP20,.1	ZIP, ZIP20,.1	SOJ, SOJ20/26,.34	SOJ, SOJ20/26,.34	ZIP, ZIP20,.1	SOJ, SOJ20/26,.34	DIP, DIP18,.3	DIP, DIP18,.3	DIP, DIP18,.3
Contacts	20	20	20	20	20	20	20	18	18	18
Reach Compliance Code	unknow	unknow	unknow	unknow	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	NIBBLE	NIBBLE	NIBBLE	NIBBLE	NIBBLE	NIBBLE	NIBBLE	NIBBLE	NIBBLE	NIBBLE
Maximum access time	100 ns	100 ns	80 ns	80 ns	60 ns	60 ns	70 ns	100 ns	60 ns	70 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-PDSO-J20	R-PZIP-T19	R-PZIP-T19	R-PDSO-J20	R-PDSO-J20	R-PZIP-T19	R-PDSO-J20	R-PDIP-T18	R-PDIP-T18	R-PDIP-T18
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
length	17.145 mm	26.165 mm	26.165 mm	17.145 mm	17.145 mm	26.165 mm	17.145 mm	22.02 mm	22.02 mm	22.02 mm
memory density	1048576 bi	1048576 bi	1048576 bi	1048576 bi	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM
memory width	1	1	1	1	1	1	1	1	1	1
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	20	19	19	20	20	19	20	18	18	18
word count	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	1MX1	1MX1	1MX1	1MX1	1MX1	1MX1	1MX1	1MX1	1MX1	1MX1
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOJ	ZIP	ZIP	SOJ	SOJ	ZIP	SOJ	DIP	DIP	DIP
Encapsulate equivalent code	SOJ20/26,.34	ZIP20,.1	ZIP20,.1	SOJ20/26,.34	SOJ20/26,.34	ZIP20,.1	SOJ20/26,.34	DIP18,.3	DIP18,.3	DIP18,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	512	512	512	512	512	512	512	512	512	512
Maximum seat height	3.68 mm	10.16 mm	10.16 mm	3.68 mm	3.68 mm	10.16 mm	3.68 mm	4.65 mm	4.65 mm	4.65 mm
Maximum standby current	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A
Maximum slew rate	0.065 mA	0.065 mA	0.075 mA	0.075 mA	0.095 mA	0.095 mA	0.085 mA	0.065 mA	0.095 mA	0.085 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	NO	NO	YES	YES	NO	YES	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	J BEND	THROUGH-HOLE	THROUGH-HOLE	J BEND	J BEND	THROUGH-HOLE	J BEND	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	ZIG-ZAG	ZIG-ZAG	DUAL	DUAL	ZIG-ZAG	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	7.62 mm	2.96 mm	2.96 mm	7.62 mm	7.62 mm	2.96 mm	7.62 mm	7.62 mm	7.62 mm	7.62 mm

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