STP32N06 datasheet, PDF - EEWORLD Datasheet

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STP32N06: DescriptionN - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR; File Size184KB，10 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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STP32N06 Overview

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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STP32N06L

STP32N06LFI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

STP32N06L

STP32N06LFI

DSS

60 V

DS( on)

< 0.055

Ω

< 0.055

Ω

32 A

19 A

TYPICAL R

DS(on)

= 0.045

Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100

LOW GATE CHARGE

HIGH CURRENT CAPABILITY

LOGIC LEVEL COMPATIBLE INPUT

175 C OPERATING TEMPERATURE

APPLICATION ORIENTED

CHARACTERIZATION

TO-220

ISOWATT220

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

REGULATORS

DC-DC & DC-AC CONVERTERS

MOTOR CONTROL, AUDIO AMPLIFIERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

STP32N06L

D S

DG R

D M

(•)

tot

ISO

stg

Drain-source Voltage (V

= 0)

Drain- gate Voltage (R

= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T

= 25

Drain Current (continuous) at T

= 100 C

Drain Current (pulsed)

Total Dissipation at T

= 25

Derating Factor

Insulation Withstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

Value

STP32N06LFI

128

105

0.7



-65 to 175

175

128

0.27

2000

Unit

(•) Pulse width limited by safe operating area

November 1996

1/10

STP32N06 Related Products

	STP32N06	STP36N06	STP36N06FI	STP32N06L	STP32N06LFI
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Is it lead-free?	-	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	-	conform to	conform to	conform to	conform to
Parts packaging code	-	TO-220AB	TO-220AB	TO-220AB	TO-220AB
package instruction	-	FLANGE MOUNT, R-PSFM-T3	ISOWATT220, 3 PIN	TO-220, 3 PIN	ISOWATT220, 3 PIN
Contacts	-	3	3	3	3
Reach Compliance Code	-	compli	_compli	_compli	_compli
ECCN code	-	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	-	220 mJ	220 mJ	180 mJ	180 mJ
Configuration	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	-	60 V	60 V	60 V	60 V
Maximum drain current (Abs) (ID)	-	36 A	21 A	32 A	19 A
Maximum drain current (ID)	-	36 A	21 A	32 A	19 A
Maximum drain-source on-resistance	-	0.04 Ω	0.04 Ω	0.055 Ω	0.055 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	-	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	-	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	-	e3	e3	e3	e3
Number of components	-	1	1	1	1
Number of terminals	-	3	3	3	3
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	-	175 °C	175 °C	175 °C	175 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	-	120 W	40 W	105 W	40 W
Maximum pulsed drain current (IDM)	-	144 A	144 A	128 A	128 A
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	-	NO	NO	NO	NO
Terminal surface	-	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	-	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON
Maker	-	-	STMicroelectronics	STMicroelectronics	STMicroelectronics

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