STP32N06L
STP32N06LFI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP32N06L
STP32N06LFI
s
s
s
s
s
s
s
s
s
V
DSS
60 V
60 V
R
DS( on)
< 0.055
Ω
< 0.055
Ω
I
D
32 A
19 A
TYPICAL R
DS(on)
= 0.045
Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
LOGIC LEVEL COMPATIBLE INPUT
o
175 C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
3
1
2
1
2
3
TO-220
ISOWATT220
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
STP32N06L
V
D S
V
DG R
V
GS
I
D
I
D
I
D M
(•)
P
tot
V
ISO
T
stg
T
j
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
Value
STP32N06LFI
60
60
±
15
32
22
128
105
0.7
-65 to 175
175
19
13
128
40
0.27
2000
Unit
V
V
V
A
A
A
W
W/
o
C
V
o
o
C
C
(•) Pulse width limited by safe operating area
November 1996
1/10
STP36N06L/FI
THERMAL DATA
TO-220
R
thj-cas e
R
thj- amb
R
t hc- sin k
T
l
Thermal Resistance Junction-case
Max
1.43
62.5
0.5
300
ISOWATT220
3.75
o
o
o
C/W
C/W
C/W
o
C
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
I
A R
E
AS
E
AR
I
A R
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
D D
= 25 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
o
Max Value
32
180
45
22
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25 C unless otherwise specified)
OFF
Symbol
V
( BR)DSS
I
DS S
I
G SS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I
D
= 250
µA
V
G S
= 0
Min.
60
1
10
±
100
Typ.
Max.
Unit
V
µA
µA
nA
Zero Gate Voltage
V
DS
= Max Rating
Drain Current (V
GS
= 0) V
DS
= Max Rating x 0.8
Gate-body Leakage
Current (V
D S
= 0)
V
GS
=
±
15 V
T
c
= 125 C
o
ON (∗)
Symbol
V
G S(th)
R
DS( on)
I
D( on)
Parameter
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 5 V
Test Conditions
I
D
= 250
µA
I
D
= 16 A
32
Min.
1
Typ.
1.6
0.045
Max.
2.5
0.055
Unit
V
Ω
A
V
DS
> I
D( on)
x R
D S(on) max
V
GS
= 10 V
DYNAMIC
Symbol
g
fs
(∗)
C
iss
C
oss
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
> I
D( on)
x R
D S(on) max
V
DS
= 25 V
f = 1 MHz
I
D
= 16 A
V
G S
= 0
Min.
10
Typ.
22
980
320
80
1300
450
110
Max.
Unit
S
pF
pF
pF
2/10
STP36N06L/FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
t
d(on)
t
r
(di/dt)
on
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Test Conditions
V
DD
= 25 V I
D
= 16 A
V
GS
= 5 V
R
G
= 50
Ω
(see test circuit, figure 3)
V
DD
= 40 V I
D
= 32 A
V
GS
= 5 V
R
G
= 50
Ω
(see test circuit, figure 5)
V
DD
= 40 V
I
D
= 32 A
V
GS
= 5 V
Min.
Typ.
60
430
130
Max.
90
630
Unit
ns
ns
A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
25
9
12
35
nC
nC
nC
SWITCHING OFF
Symbol
t
r(Vof f)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 40 V I
D
= 32 A
R
G
= 50
Ω
V
GS
= 5 V
(see test circuit, figure 5)
Min.
Typ.
90
140
250
Max.
130
200
350
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
I
S D
I
SDM
(•)
V
S D
(∗)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 32 A
V
G S
= 0
100
0.2
4
I
SD
= 32 A
di/dt = 100 A/µs
V
DD
= 25 V
T
j
= 150
o
C
(see test circuit, figure 5)
Test Conditions
Min.
Typ.
Max.
32
128
1.6
Unit
A
A
V
ns
µC
A
(∗) Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
3/10
STP36N06L/FI
Thermal Impedance For TO-220
Thermal Impedance For ISOWATT220
Derating Curve For TO-220
Derating Curve For ISOWATT220
Output Characteristics
Transfer Characteristics
4/10
STP36N06L/FI
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
Recruitment
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