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STP36N06FI

Description
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size184KB,10 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STP36N06FI Overview

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP36N06FI Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-220AB
package instructionISOWATT220, 3 PIN
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)220 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)21 A
Maximum drain current (ID)21 A
Maximum drain-source on-resistance0.04 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)250 pF
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment35 W
Maximum power dissipation(Abs)40 W
Maximum pulsed drain current (IDM)144 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum opening time (tons)165 ns
STP32N06L
STP32N06LFI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP32N06L
STP32N06LFI
s
s
s
s
s
s
s
s
s
V
DSS
60 V
60 V
R
DS( on)
< 0.055
< 0.055
I
D
32 A
19 A
TYPICAL R
DS(on)
= 0.045
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
LOGIC LEVEL COMPATIBLE INPUT
o
175 C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
3
1
2
1
2
3
TO-220
ISOWATT220
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
STP32N06L
V
D S
V
DG R
V
GS
I
D
I
D
I
D M
(•)
P
tot
V
ISO
T
stg
T
j
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
Value
STP32N06LFI
60
60
±
15
32
22
128
105
0.7
-65 to 175
175
19
13
128
40
0.27
2000
Unit
V
V
V
A
A
A
W
W/
o
C
V
o
o
C
C
(•) Pulse width limited by safe operating area
November 1996
1/10

STP36N06FI Related Products

STP36N06FI STP32N06 STP36N06 STP32N06L STP32N06LFI
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Is it lead-free? Lead free - Lead free Lead free Lead free
Is it Rohs certified? conform to - conform to conform to conform to
Maker STMicroelectronics - - STMicroelectronics STMicroelectronics
Parts packaging code TO-220AB - TO-220AB TO-220AB TO-220AB
package instruction ISOWATT220, 3 PIN - FLANGE MOUNT, R-PSFM-T3 TO-220, 3 PIN ISOWATT220, 3 PIN
Contacts 3 - 3 3 3
Reach Compliance Code _compli - compli _compli _compli
ECCN code EAR99 - EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 220 mJ - 220 mJ 180 mJ 180 mJ
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V - 60 V 60 V 60 V
Maximum drain current (Abs) (ID) 21 A - 36 A 32 A 19 A
Maximum drain current (ID) 21 A - 36 A 32 A 19 A
Maximum drain-source on-resistance 0.04 Ω - 0.04 Ω 0.055 Ω 0.055 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB - TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 - e3 e3 e3
Number of components 1 - 1 1 1
Number of terminals 3 - 3 3 3
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C - 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 40 W - 120 W 105 W 40 W
Maximum pulsed drain current (IDM) 144 A - 144 A 128 A 128 A
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
surface mount NO - NO NO NO
Terminal surface Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON
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